Semiconductor laser control device and image forming device

1. A semiconductor laser control device, comprising:

a plurality of light sources that is configured with eight or more semiconductor laser elements;

a detecting section including a photodiode that detects a light power of the light sources;

a light power control unit that compares a signal according to the light power detected by the detecting section with a control signal corresponding to a predetermined light power to control a current supplied to the light sources, the plurality of light sources being controlled independently from each other by the light power control unit;

a voltage clamp circuit including a bipolar transistor having a base or a field effect transistor having a gate, the transistor being connected to a terminal of the photodiode, and

a first resistor and second resistor connected serially to each other between a bias voltage and ground, the base or gate of the transistor being connected to a junction between the first and second resistor, and

wherein a predetermined voltage is applied at the base or gate of the transistor to allow a current to flow from the terminal of the photodiode through the transistor when a voltage of the terminal reaches a clamp voltage, so as to prevent the voltage of the terminal from exceeding the clamp voltage,

wherein the clamp voltage is chosen to avoid the photodiode entering a saturation state that causes a delay in detecting a change in the light power of one or more of the independently controlled light sources.

2. The semiconductor laser control device according to claim 1 , further comprising a clamp voltage adjusting circuit that adjusts the clamp voltage of the voltage clamp circuit.

3. The semiconductor laser control device according to claim 1 , wherein the control signal is applied at a voltage equal to or more than 1V.

4. The semiconductor laser control device according to claim 1 , wherein in a case that an on-off state of the light sources changes from a first state in which more than one of the light sources are on, to a second state in which only one of the light sources is on, the voltage clamp circuit reduces an amount of time for an output voltage corresponding to the detected light power to reach a second output voltage corresponding to the second state.

5. The semiconductor laser control device according to claim 1 , wherein the clamp voltage is lower than a power source voltage of the semiconductor laser control device.

6. The semiconductor laser control device according to claim 1 , wherein the terminal of the photodiode is an anode of the photodiode.

7. The semiconductor laser control device according to claim 1 , wherein the voltage clamp circuit is configured with the bipolar transistor as a common base circuit.

8. The semiconductor laser control device according to claim 1 , wherein the voltage clamp circuit is configured with the field effect transistor as a common gate circuit.

9. An optical scanning device comprising:

a semiconductor laser control device including:

a plurality of light sources that is configured with eight or more semiconductor laser elements;

a detecting section including a photodiode that detects a light power of the light sources;

a light power control unit that compares a signal according to the light power detected by the detecting section with a control signal corresponding to a predetermined light power to control a current supplied to the light sources, the plurality of light sources being controlled independently from each other by the light power control unit;

a voltage clamp circuit including a bipolar transistor having a base or a field effect transistor having a gate, the transistor being connected to a terminal of the photodiode; and

a first resistor and second resistor connected serially to each other between a bias voltage and ground, the base or gate of the transistor being connected to a junction between the first and second resistor, and

wherein a predetermined voltage is applied at the base or gate of the transistor to allow a current to flow from the terminal of the photodiode through the transistor when a voltage of the terminal reaches a clamp voltage, so as to prevent the voltage of the terminal from exceeding the clamp voltage,

wherein the clamp voltage is chosen to avoid the photodiode entering a saturation state that causes a delay in detecting a change in the light power of one or more of the independently controlled light sources.

10. An image forming device comprising:

an optical scanning device including:

a plurality of light sources that is configured with eight or more semiconductor laser elements;

a detecting section including a photodiode that detects a light power of the light sources;

a light power control unit that compares a signal according to the light power detected by the detecting section with a control signal corresponding to a predetermined light power to control a current supplied to the light sources, the plurality of light sources being controlled independently from each other by the light power control unit;

a voltage clamp circuit including a bipolar transistor having a base or a field effect transistor having a gate, the transistor being connected to a terminal of the photodiode; and

a first resistor and second resistor connected serially to each other between a bias voltage and ground, the junction between the first and second resistor being connected to the base or gate of the transistor, and

wherein a predetermined voltage is applied at the base or gate of the transistor to allow a current to flow from the terminal of the photodiode through the transistor when a voltage of the terminal reaches a clamp voltage, so as to prevent the voltage of the terminal from exceeding the clamp voltage,

wherein the clamp voltage is chosen to avoid the photodiode entering a saturation state that causes a delay in detecting a change in the light power of one or more of the independently controlled light sources.