Self-alignment insulation structure
View Patent ↗An insulation structure is provided. The insulation structure includes a deep trench filled with silicon and disposed in a substrate, a first oxide layer serving as the insulation structure and disposed on the surface of the silicon in the deep trench, a first silicon layer disposed on the first oxide layer, a gate disposed on the first silicon layer and a shallow trench isolation adjacent to the deep trench.
1. A semiconductor structure, comprising:
a substrate;
a deep trench filled with silicon and disposed in said substrate;
a first oxide layer disposed on the surface of said silicon in said deep trench, wherein said first oxide layer serves as an insulation structure;
a first silicon layer disposed on said first oxide layer;
a gate disposed on said first silicon layer; and
a shallow trench isolation adjacent to said deep trench.
2. The semiconductor structure of claim 1 , serving as said insulation structure of a passing gate.
3. The semiconductor structure of claim 1 , wherein said gate is not adjacent to said shallow trench isolation.
4. The semiconductor structure of claim 1 , wherein said shallow trench isolation is adjacent to said deep trench, to said first oxide layer and to said first silicon layer.
5. The semiconductor structure of claim 1 , wherein said shallow trench isolation solely comprises an insulating material.
6. The semiconductor structure of claim 1 , wherein said first oxide layer and said first silicon layer approximately align with said deep trench.
7. The semiconductor structure of claim 1 , wherein said gate and said first silicon layer are mutually different.