IP Library Granted Patent US 8,658,454
Granted Patent B2
US 8,658,454 · App. 12/886,393 · Granted Feb 25, 2014

Method of fabricating a solar cell

Inventors: Thomas Pass (San Jose, CA); Robert Rogers (Santa Clara, CA)
Assignee: SunPower Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,658,454
App. No.
12/886,393
Granted
Feb 25, 2014
Kind
B2
Abstract

Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution may be dispensed into one or more regions of the porous layer to provide a patterned composite layer. The substrate may then be heated.

Claims (31)

1. A method of fabricating a solar cell, the method comprising:

forming a porous layer on a surface of a substrate, the porous layer comprising a plurality of particles and a plurality of voids;

dispensing a solution into first and second regions, but not into a region between the first and second regions, of the porous layer to provide a patterned composite layer;

etching to remove the region between the first and second regions without etching the first and second regions; and, subsequently,

heating the substrate.

2. The method of claim 1 , wherein heating the substrate comprises consolidating the patterned composite layer.

3. The method of claim 1 , wherein dispensing the solution comprises dispensing a solution comprising a dopant source of charge carrier impurity atoms for the substrate.

4. The method of claim 3 , wherein heating the substrate comprises driving the charge carrier impurity atoms of the dopant source into the substrate.

5. The method of claim 4 , wherein the dopant source is an N-type dopant source for silicon, the method further comprising:

dispensing a second solution into one or more other regions of the porous layer to provide a dual-patterned composite layer, wherein dispensing the second solution comprises dispensing a solution comprising a P-type dopant source of charge carrier impurity atoms for the substrate, and wherein heating the substrate further comprises driving the charge carrier impurity atoms of the P-type dopant source into the substrate.

6. The method of claim 1 , wherein forming the porous layer on the surface of the substrate comprises forming each void of the plurality of voids to have a dimension suitable to receive the solution at the surface of the substrate and to restrict lateral diffusion of the solution.

7. The method of claim 1 , wherein dispensing the solution comprises using an ink jet process.

8. The method of claim 7 , wherein the solution has a viscosity of approximately 10 centipoise.

9. The method of claim 1 , wherein forming the porous layer on the substrate comprises forming the porous layer on, and conformal with, a surface having a surface roughness, wherein the porous layer has a thickness approximately in the range of 0.5-20 microns.

10. The method of claim 1 , wherein the porous layer is a solid, and wherein forming the porous layer comprises:

providing, as a mixture, the plurality of particles and a solvent; and

evaporating the solvent to provide the porous layer from the mixture.

11. A method of fabricating a solar cell, the method comprising:

forming a porous layer on a surface of a substrate, the porous layer comprising a plurality of particles and a plurality of voids;

dispensing a solution into first and second regions, but not into a region between the first and second regions, of the porous layer to provide a patterned composite layer, the solution comprising a dopant source of charge carrier impurity atoms for the substrate; and

etching to remove the region between the first and second regions without etching the first and second regions.

12. The method of claim 11 , wherein the dopant source is an N-type dopant source for silicon, the method further comprising:

dispensing a second solution into one or more other regions of the porous layer to provide a dual-patterned composite layer, wherein dispensing the second solution comprises dispensing a solution comprising a P-type dopant source of charge carrier impurity atoms for the substrate.

13. The method of claim 12 , wherein dispensing the solution and the second solution comprises dispensing both the solution and the second solution in a single pass of the porous layer.

14. The method of claim 12 , wherein dispensing the solution and the second solution comprises dispensing the solution in a first pass of the porous layer and dispensing the second solution in a second, separate, pass of the porous layer.

15. The method of claim 11 , wherein forming the porous layer on the surface of the substrate comprises forming each void of the plurality of voids to have a dimension suitable to receive the solution at the surface of the substrate and to restrict lateral diffusion of the solution.

16. The method of claim 11 , wherein dispensing the solution comprises using an ink jet process.

17. The method of claim 11 , wherein forming the porous layer on the substrate comprises forming the porous layer on, and conformal with, a surface having a surface roughness, wherein the porous layer has a thickness approximately in the range of 0.5-20 microns.

18. The method of claim 11 , wherein the porous layer is a solid, and wherein forming the porous layer comprises:

providing, as a mixture, the plurality of particles and a solvent; and

evaporating the solvent to provide the porous layer from the mixture.

Assignments (2)
CONFIRMATORY LICENSE Recorded Jul 9, 2012
From: SUNPOWER CORPORATION
To: UNITED STATE DEPARTMENT OF ENERGY
Reel/Frame 028556/0143 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2011
From: PASS, THOMAS; ROGERS, ROBERT
To: SUNPOWER CORPORATION
Reel/Frame 025612/0325 →
Continuity (1)
Related Publication 20120067406A1 · Mar 22, 2012