Permeation barrier for encapsulation of devices and substrates
A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF 4 —O 2 Plasma Reactive Ion Etch Rate and a second region having a second composition corresponding to a second CF 4 —O 2 Plasma Reactive Ion Etch Rate, wherein the second Etch Rate is greater than the first Etch Rate by a factor greater than 1.2 and the hybrid permeation barrier film is a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the mixture is created from a single precursor material.
1. A permeation barrier film structure for encapsulating an organic light emitting device, the permeation barrier film structure comprising:
a bilayer stack having a hybrid permeation barrier composition that comprises a homogeneous mixture of a polymeric material and a non-polymeric material, the bilayer stack comprising:
a first region directly deposited on the organic light emitting device, wherein the first region having a first composition that is a homogeneous mixture of a polymeric material and a non-polymeric material and having a first CF 4 —O 2 Plasma Reactive Ion Etch Rate; and
a second region deposited on the first region, wherein the second region having a second composition that is a homogeneous mixture of said polymeric material and said non-polymeric material and having a second CF 4 —O 2 Plasma Reactive Ion Etch Rate, wherein the second CF 4 —O 2 Plasma Reactive Ion Etch Rate is greater than the first CF 4 —O 2 Plasma Reactive Ion Etch Rate by a factor greater than 1.2, wherein the first region having a maximum thickness of 1000 nm ±10 nm.
2. The permeation barrier film structure of claim 1 , wherein the second CF 4 —O 2 Plasma Reactive Ion Etch Rate is greater than the first CF 4 —O 2 Plasma Reactive Ion Etch Rate by a factor between 1.2 to 5.
3. The permeation barrier film structure of claim 1 , wherein the ratio of the thickness of the second region to the first region is between 0.5 to 20.
4. The permeation barrier film structure of claim 1 , wherein the hybrid permeation barrier composition comprises a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the first region and the second region are created from a single precursor material.
5. The permeation barrier film structure of claim 4 , wherein the polymeric material is silicone and the non-polymeric material comprises one or more silicon oxides, wherein the first region and the second region are deposited by plasma enhanced chemical vapor deposition of an organo-silicon compound in oxygen-containing reactant gas.
6. The permeation barrier film structure of claim 5 , wherein the silicon oxides comprise one or more of SiO, SiO 2 , and mixed-valence oxides SiO x .
7. The permeation barrier film structure of claim 5 , wherein the organo-silicon compound is a siloxane.
8. The permeation barrier film structure of claim 7 , wherein the siloxane compound is one of Hexamethyl disiloxane or dimethyl siloxane.
9. The permeation barrier film structure of claim 4 , wherein the polymeric material is silicone and the non-polymeric material is silicon nitride, wherein the first region and the second region are deposited by plasma enhanced chemical vapor deposition of an organo-silicon compound in nitrogen-containing reactant gas.
10. The permeation barrier film structure of claim 9 , wherein the organo-silicon compound is a siloxane.
11. The permeation barrier film structure of claim 10 , wherein the siloxane compound is one of Hexamethyl disiloxane or dimethyl siloxane.
12. The permeation barrier film structure of claim 1 , wherein the first CF 4 —O 2 Plasma Reactive Ion Etch Rate is less than 65 nm/min and the second CF 4 —O 2 Plasma Reactive Ion Etch Rate is greater than 80 nm/min.
13. An electronic device comprising an organic light emitting device provided on a substrate, the electronic device comprising:
a permeation barrier film structure coated over the organic light emitting device, said permeation barrier film structure comprising:
one or more bilayer stacks with a first of the one or more bilayer stacks directly deposited on the organic light emitting device, wherein each of said bilayer stacks has a hybrid permeation barrier composition that comprises a homogeneous mixture of a polymeric material and a non-polymeric material, wherein said first bilayer stack comprising:
a first region directly deposited on the organic light emitting device, wherein the first region having a first composition that is a homogeneous mixture of a polymeric material and a non-polymeric material, and having a first CF 4 —O 2 Plasma Reactive Ion Etch Rate that is directly deposited on the organic light emitting device; and
a second region deposited on the first region, wherein the second region having a second composition that is a homogeneous mixture of said polymeric material and said non-polymeric material, and having a second CF 4 —O 2 Plasma Reactive Ion Etch Rate, that is deposited on the first region; wherein the second CF 4 —O 2 Plasma Reactive Ion Etch Rate is greater than the first CF 4 —O 2 Plasma Reactive Ion Etch Rate by a factor greater than 1.2, wherein the first region having a maximum thickness of 1000 nm ±10 nm.
14. The electronic device of claim 13 , wherein the second CF 4 —O 2 Plasma Reactive Ion Etch Rate is greater than the first CF 4 —O 2 Plasma Reactive Ion Etch Rate by a factor between 1.2 to 5.
15. The electronic device of claim 13 , wherein the ratio of the thickness of the second region to the first region is between 0.5 to 20.
16. The electronic device of claim 13 , wherein the hybrid permeation barrier composition comprises a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the first region and the second region are created from a single precursor material.
17. The electronic device of claim 16 , wherein the polymeric material is silicone and the non-polymeric material is one or more silicon oxides.
18. The electronic device of claim 17 , wherein the silicon oxides comprise one or more of SiO, SiO 2 , and mixed-valence oxides SiO x .
19. The electronic device of claim 17 , wherein the organo-silicon compound is a siloxane.
20. The electronic device of claim 19 , wherein the siloxane compound is one of Hexamethyl disiloxane or dimethyl siloxane.
21. The electronic device of claim 16 , wherein the polymeric material is silicone and the non-polymeric material is silicon nitride.
22. The electronic device of claim 21 , wherein the organo-silicon compound is a siloxane.
23. The electronic device of claim 22 , wherein the siloxane compound is one of Hexamethyl disiloxane or dimethyl siloxane.
24. The electronic device of claim 13 , further comprising an electrode layer in direct contact with the permeation barrier film structure, wherein the electrode layer is a sputtered metal film.
25. The electronic device of claim 13 , further comprising another permeation barrier film structure provided between the organic light emitting device and the substrate, wherein said another permeation barrier film structure comprising:
another bilayer stack comprising:
a third region having said first composition that is a homogeneous mixture of said polymeric material and said non-polymeric material, and having said first CF 4 —O 2 Plasma Reactive Ion Etch Rate, said third region being directly deposited on the substrate; and
a fourth region having said second composition that is a homogeneous mixture of said polymeric material and said non-polymeric material, and having said second CF 4 —O 2 Plasma Reactive Ion Etch Rate, said fourth region being deposited on the third region.
26. The electronic device of claim 25 , wherein the third region having a maximum thickness of 1000 nm ±10 nm.