SURFACE TREATMENT APPARATUS AND METHOD FOR SEMICONDUCTOR SUBSTRATE
In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.
1 . A surface treatment apparatus for a semiconductor substrate, comprising:
a holding unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon;
a first supply unit which supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation;
a second supply unit which supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate;
a third supply unit which supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern;
a drying treatment unit which dries the semiconductor substrate; and
a removal unit which removes the water repellent protective film while making the convex pattern remain.
2 . The surface treatment apparatus for a semiconductor substrate according to claim 1 , wherein the first supply unit has a heating unit for heating the chemical solution.
3 . The surface treatment apparatus for a semiconductor substrate according to claim 1 , further comprising
a fourth supply unit which supplies alcohol to the surface of the semiconductor substrate, to rinse the semiconductor substrate.
4 . The surface treatment apparatus for a semiconductor substrate according to claim 2 , further comprising
a fourth supply unit which supplies alcohol to the surface of the semiconductor substrate, to rinse the semiconductor substrate.
5 . A surface treatment apparatus for a semiconductor substrate, comprising:
a holding unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon;
a first supply unit which supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation;
a second supply unit which supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate;
a third supply unit which supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern;
a drying treatment unit which dries the semiconductor substrate; and
a removal unit which irradiates the semiconductor substrate with light, to oxidize the semiconductor substrate surface and remove the water repellent protective film while making the convex pattern remain.
6 . The surface treatment apparatus for a semiconductor substrate according to claim 5 , wherein
the drying treatment unit is included in the holding unit, and the holding unit performs spin drying treatment on the semiconductor substrate.
7 . The surface treatment apparatus for a semiconductor substrate according to claim 6 , wherein
the removal unit has an outlet for discharging pure water at the time of oxidation of the semiconductor substrate surface.
8 . A surface treatment method for a semiconductor substrate, comprising
forming a plurality of convex patterns on a semiconductor substrate,
washing the surface of the convex pattern with use of a chemical solution,
rinsing the semiconductor substrate with use of pure water after washing,
irradiating the convex pattern surface with light after rinsing,
forming a water repellent protective film on the convex pattern surface, irradiated with the light, with use of a water repelling agent,
rinsing the semiconductor substrate with use of pure water after formation of the water repellent protective film,
drying the semiconductor substrate, and
removing the water repellent protective film while the convex pattern is made remain.
9 . The surface treatment method for a semiconductor substrate according to claim 8 , wherein the convex pattern is formed by a side-wall transfer process.
10 . The surface treatment method for a semiconductor substrate according to claim 8 , wherein the convex pattern has a first side face that forms a first angle with respect to the surface of the semiconductor substrate, and a second side face that is located on the first side face and forms a second angle, different from the first angle, with respect to the surface of the semiconductor substrate.