Resistance change type memory

1. A resistance change type memory comprising:

a memory cell and a capacitor which are provided on a semiconductor substrate;

the memory cell including a resistance change type memory and a select transistor, the resistance change type storage element which changes in resistance value in accordance with data to be stored, and the select transistor including a first semiconductor region provided in the semiconductor substrate, and a gate electrode facing the side surface of the first semiconductor region via a gate insulating film;

the capacitor including a second semiconductor region provided in the semiconductor substrate, a capacitor electrode facing the side surface of the second semiconductor region, and a first capacitor insulating film provided between the second semiconductor region and the capacitor electrode.

2. The resistance change type memory of claim 1 , wherein

the first and second semiconductor regions are first and second fin portions, respectively,

the gate electrode makes a two-level crossing with respect to the first fin portion to cover both side surfaces of the first fin portion, and

the capacitor electrode makes a two-level crossing with respect to the second fin portion to cover both side surfaces of the second fin portion.

3. The resistance change type memory of claim 2 , wherein

the gate electrode covers the upper surface of the first fin portion via an insulating film thicker than the gate insulating film, and

the capacitor electrode covers the upper surface of the second fin portion via the capacitor insulating film.

4. The resistance change type memory of claim 1 , wherein

the first semiconductor region includes a first trench,

the second semiconductor region includes a second trench,

the gate electrode is embedded in the first trench via the gate insulating film, and

the capacitor electrode is embedded in the second trench via the capacitor insulating film.

5. The resistance change type memory of claim 4 , wherein

the gate electrode includes a first gate electrode portion having a first dimension in a direction parallel to the surface of the semiconductor substrate, and a second gate electrode portion which has a circular sectional shape and which has a second dimension larger than the first dimension in a direction parallel to the surface of the semiconductor substrate, and

the capacitor electrode includes a first electrode portion having a third dimension in a direction parallel to the surface of the semiconductor substrate, and a second electrode portion having a fourth dimension equal to or more than the first dimension in a direction parallel to the surface of the semiconductor substrate.

6. The resistance change type memory of claim 1 , wherein

the capacitor further includes a second capacitor insulating film on the capacitor electrode, and a conductor including part of the same component as the resistance change type storage element on the second capacitor insulating film.

7. A resistance change type memory comprising:

a memory cell and a capacitor which are provided on a semiconductor substrate;

the memory cell including a resistance change type storage element and a select transistor, the resistance change type storage element which stores data in accordance with a change in resistance state, and the select transistor including a first fin portion which is a first semiconductor region, and a gate electrode which makes a two-level crossing with respect to the fin portion via a gate insulating film;

the capacitor including at least one second fin portion which is a second semiconductor region, a first capacitor insulating film provided on the side surface of the second fin portion, and a capacitor electrode which makes a two-level crossing with respect to the second fin portion via the first capacitor insulating film.

8. The resistance change type memory of claim 7 , wherein

an isolation insulating film is provided between the bottom of the gate electrode and the semiconductor substrate, and

the first capacitor insulating film is provided between the bottom of the capacitor electrode and the semiconductor substrate.

9. The resistance change type memory of claim 7 , wherein

the capacitor electrode makes a two-level crossing with respect to a plurality of second fin portions via the upper surface of the semiconductor substrate.

10. The resistance change type memory of claim 7 , wherein

the gate electrode covers the upper part of the first fin portion via an insulating film thicker than the gate insulating film, and

the capacitor electrode covers the upper part of the second fin portion via the first capacitor insulating film.

11. The resistance change type memory of claim 7 , wherein

the capacitor further includes a second capacitor insulating film on the capacitor electrode, and a conductor including part of the same component as the resistance change type storage element on the second capacitor insulating film.

12. A resistance change type memory comprising:

a memory cell and a capacitor which are provided on a semiconductor substrate;

the memory cell including a resistance change type storage element and a select transistor, the a resistance change type storage element which stores data in accordance with a change in resistance state, and the select transistor including a first semiconductor region provided with a first trench, and a gate electrode embedded in the first trench via a gate insulating film;

the capacitor including a second semiconductor region provided with at least one second trench, a first capacitor insulating film provided on the second semiconductor region along the trench, and a capacitor electrode embedded in the second trench via the first capacitor insulating film.

13. The resistance change type memory of claim 12 , wherein

the first trench includes

a first portion having a first dimension in a direction parallel to the surface of the semiconductor substrate and extending in a depth direction of the semiconductor substrate, and

a second portion which is connected to the bottom of the first portion and which has a circular sectional shape of a second dimension larger than the first dimension, and

the gate electrode includes

an upper gate electrode portion embedded in the first portion, and

a lower gate electrode portion having a circular sectional shape and embedded in the second portion.

14. The resistance change type memory of claim 13 , wherein

the second trench includes

a third portion having a first dimension in a direction parallel to the surface of the semiconductor substrate and extending in the depth direction of the semiconductor substrate, and

a fourth portion which is connected to the bottom of the third portion and which has a circular sectional shape of a second dimension larger than the first dimension, and

the capacitor electrode includes

an upper capacitor electrode portion embedded in the third portion, and

a lower capacitor electrode portion having a circular sectional shape and embedded in the fourth portion.

15. The resistance change type memory of claim 14 , wherein

a portion of the gate insulating film in contact with the lower gate electrode portion has a first thickness,

a portion of the gate insulating film in contact with the upper gate electrode portion has a second thickness larger than the first thickness, and

the capacitor insulating film has a third thickness smaller than the second thickness.

16. The resistance change type memory of claim 13 , wherein

the second trench has the second dimension to extend in the depth direction of the semiconductor substrate.

17. The resistance change type memory of claim 12 , wherein

the gate electrode has a saddle structure at the bottom of the first trench, and

the capacitor electrode has a saddle structure at the bottom of the second trench.

18. The resistance change type memory of claim 12 , wherein

the capacitor electrode is provided on the second semiconductor region across the plurality of second trenches.

19. The resistance change type memory of claim 18 , wherein

the end of the upper part of the second semiconductor region adjacent to an opening of the second trench is rounded.

20. The resistance change type memory of claim 12 , wherein

the capacitor further includes a second capacitor insulating film on the capacitor electrode, and a conductor including part of the same component as the resistance change type storage element on the second capacitor insulating film.