IP Library Granted Patent US 8,411,523
Granted Patent B2
US 8,411,523 · App. 12/890,083 · Granted Apr 2, 2013

Reduced current requirements for DRAM self-refresh modes via staggered refresh operations of subsets of memory banks or rows

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Quick Facts
Patent No.
US 8,411,523
App. No.
12/890,083
Granted
Apr 2, 2013
Kind
B2
Abstract

Embodiments of the invention describe systems, methods, and apparatuses to reduce the instantaneous power necessary to execute a DRAM device initiated self-refresh. Embodiments of the invention describe a DRAM device enabled to stagger self-refreshes between a plurality of banks. Staggering self-refreshes between banks reduces the current required for a DRAM self-refresh, thus reducing the amount of current required by the DRAM device.

Claims (35)

1. A system comprising:

a dynamic random access memory (DRAM) device to execute a self-refresh mode, the DRAM device including a plurality of banks, each bank to include a plurality of rows, the self-refresh mode to include a plurality of commands, each command to refresh rows of one of the banks;

a memory controller operatively coupled to the DRAM device; and

logic, operatively coupled to the DRAM device and the memory controller, to:

determine the number of banks included in the DRAM device,

determine characteristics of power supplied to the DRAM device, and

determine a plurality of subsets of banks or rows to be concurrently refreshed in the self-refresh mode, wherein determining the plurality of subsets to be concurrently refreshed is based, at least in part, on the characteristics of power supplied to the DRAM device;

the DRAM device to execute the self-refresh mode for each of the plurality of subsets in a staggered fashion.

2. The system of claim 1 , wherein each of the plurality of subsets includes half of the number of banks included in the DRAM device.

3. The system of claim 1 , wherein each of the plurality of subsets consists of one of the plurality of banks.

4. The system of claim 1 , the memory controller to transmit a signal to the DRAM device to enable the DRAM device to execute the self-refresh mode for each of the plurality of subsets in the staggered fashion.

5. The system of claim 1 , the logic included in a basic input/output system (BIOS).

6. The system of claim 1 , each command of the self-refresh mode to refresh a subset of rows of one of the banks

7. A method comprising:

determining the number of banks included in a DRAM device, the DRAM device to include a plurality of banks, each bank to include a plurality of rows;

determining characteristics of power supplied to the DRAM device;

determining a plurality of subsets of banks or rows to be concurrently refreshed in a self-refresh mode based, at least in part, on the characteristics of power supplied to the DRAM device, the self-refresh mode to include a plurality of commands, each command to refresh rows of one of the banks; and

executing the self-refresh mode for each of the plurality of subsets in a staggered fashion.

8. The method of claim 7 , wherein each of the plurality of subsets comprises half of the number of banks included in the DRAM device.

9. The method of claim 7 , wherein each of the plurality of subsets consists of one of the plurality of banks.

10. The method of claim 7 , further comprising:

receiving a signal at the DRAM device to enable the device to execute the self-refresh mode for each of the plurality of subsets in the staggered fashion.

11. The method of claim 7 , each command of the self-refresh mode to refresh a subset of rows of one of the banks.

12. An apparatus comprising:

a plurality of DRAM banks, each DRAM bank to include a plurality of rows;

a first logic, operatively coupled to the DRAM banks, to determine characteristics of power supplied to the apparatus; and

a second logic, operatively coupled to the DRAM banks and the first logic, to:

execute a self-refresh mode for the plurality of subsets of DRAM banks or rows in a staggered fashion, the self-refresh mode to include a plurality of commands, each command to refresh rows of one of the DRAM banks; and

determine the plurality of subsets to be refreshed based, at least in part, on the characteristics of power supplied to the apparatus.

13. The apparatus of claim 12 , wherein each of the plurality of subsets comprises half of the number of DRAM banks.

14. The apparatus of claim 12 , wherein each of the plurality of subsets consists of one of the plurality of DRAM banks.

15. The apparatus of claim 12 wherein the second logic to further:

receive a signal from a memory controller to enable the apparatus to execute the self-refresh mode for each of the plurality of subsets in the staggered fashion.

16. The apparatus of claim 12 , each command of the self-refresh mode to refresh a subset of rows of one of the DRAM banks.

17. The apparatus of claim 12 , wherein the characteristics of power supplied to the apparatus comprises at least one of an amount of the power supplied to the apparatus, a voltage requirement of the apparatus, or a current value of the power supplied to the apparatus.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →