Back-side image sensor
A color back-side illuminated image sensor including, on the side of the thin semiconductor layer opposite to the illuminated surface, periodic thickness unevennesses forming an optic network having characteristics which make it capable of reflecting a given wavelength chosen within the range of the wavelengths of an illuminating incident beam.
1. A color back-side illuminated image sensor comprising: first sensor cells and second sensor cells capable of performing a photoelectric transformation,
a semiconductor substrate having a first side configured to be illuminated by an illuminating incident beam and a second side opposite to the first side; and
optic networks formed by periodic thickness unevennesses in the second side of the semiconductor substrate, the optic networks having characteristics which make the optic networks capable of reflecting a given wavelength chosen within a range of the wavelengths of the illuminating incident beam, wherein the unevennesses extend only partially through the semiconductor substrate, wherein the periodic thickness unevennesses of the optic networks have a period configured to produce a reflectivity of the optical networks for light of the given wavelength, wherein the optic networks provided for the first sensor cells having filters configured to transmit only light of a first color corresponding to the given wavelength, the second sensor cells do not have the filters configured to transmit the light of the first color and do not have the optic networks.
2. The sensor of claim 1 , wherein the unevennesses correspond to recesses in the semiconductor substrate, which are filled with silicon oxide.
3. The sensor of claim 1 , wherein the unevennesses are protrusions separated by trenches.
4. The sensor of claim 1 , wherein the light of the first color is red light.
5. A color back-side illuminated image sensor comprising: first sensor cells and second sensor cells capable of performing a photoelectric transformation,
a semiconductor substrate having a front surface and a back surface, the back surface configured to be illuminated by an illuminating incident beam;
a cathode region in the semiconductor substrate; and
first optic networks located at the front surface of the semiconductor substrate and above the cathode region, the first optic networks having characteristics which makes the first optic networks capable of reflecting a first given wavelength chosen within a range of the wavelengths of the illuminating incident beam, the characteristics including a period selected based on the first given wavelength, wherein the first optic networks provided for the first sensor cells having first filters configured to transmit only light of a first color corresponding to the first given wavelength, the second sensor cells do not have the first filters configured to transmit the light of the first color and do not have the first optic networks.
6. The sensor of claim 5 , wherein the first optic network comprises periodic unevennesses.
7. The sensor of claim 6 , wherein the unevennesses correspond to recesses in the semiconductor substrate, the recesses being filled with silicon oxide.
8. The sensor of claim 6 , wherein the unevennesses are protrusions separated by trenches.
9. The sensor of claim 5 , wherein the light of the first color is red light.
10. A color back-side illuminated image sensor comprising: a plurality of first sensor cells and a plurality of second sensor cells capable of performing a photoelectric transformation,
a semiconductor substrate having a front surface and a back surface, the back surface configured to be illuminated by an illuminating incident beam;
the plurality of first sensor cells having respective first optic networks at the front surface of the semiconductor substrate, each of the first optic networks having characteristics which makes the first optic networks capable of reflecting a given wavelength chosen within a range of the wavelengths of an illuminating incident beam, the characteristics including a period selected based on the given wavelength, wherein the first sensor cells have first filters configured to transmit red light; and the plurality of second sensor cells do not have the first filters configured to transmit red light and do not have the first optic networks.
11. The sensor of claim 10 , wherein each optic network comprises periodic unevennesses having the selected period.
12. The sensor of claim 10 , wherein the unevennesses correspond to recesses in the semiconductor substrate, the recesses being filled with silicon oxide.
13. The sensor of claim 10 , wherein the unevennesses are protrusions separated by trenches.
14. The sensor of claim 5 , wherein the optic networks are capable of reflecting the first given wavelength of the illuminating incident beam towards the back surface.
15. The sensor of claim 10 , wherein the optic networks are capable of reflecting the given wavelength of the illuminating incident beam towards the back surface.
16. The sensor of claim 6 , wherein at least one of a period of the unevennesses, a height of the periodic unevennesses, and a ratio between a width of elements in the periodic unevennesses and a width of an interval separating the elements is chosen in order to cause the first given wavelength to be reflected.
17. The sensor of claim 16 , wherein the period is approximately 350 to 400 nm, the height is approximately 50 to 300 nm, and the ratio is close to 1.
18. The sensor of claim 8 , wherein the protrusions comprise pads.
19. The sensor of claim 18 , wherein the pads have respective bases that are circular or hexagonal.
20. The sensor of claim 5 , wherein the optic networks are associated with a single cell of the sensor, the single cell including a color filter configured to detect light of the first given wavelength.
21. The sensor of claim 5 , further comprising:
a second optic network having characteristics for reflecting a second given wavelength; and
a third optic network having characteristics for reflecting a third given wavelength.