IP Library Granted Patent US 8,054,148
Granted Patent B2
US 8,054,148 · App. 12/893,444 · Granted Nov 8, 2011

Contact material, device including contact material, and method of making

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,054,148
App. No.
12/893,444
Granted
Nov 8, 2011
Kind
B2
Abstract

A device for controlling the flow of electric current is provided. The device comprises a first conductor as thin film form; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K.

Claims (20)

1. A device comprising:

a first conductor; and

a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor;

wherein at least one conductor further comprises an electrical contact, the electrical contact comprising

a solid matrix comprising a plurality of pores configured so as to exhibit an open pore structure; and

a filler material disposed within at least a portion of the plurality of pores, the filler material having a melting point of less than an operating temperature of the device,

wherein the first and second conductors are configured to contact in the electrically connected state with a contact force less than or equal to about 10 millinewtons.

2. The device of claim 1 , wherein the matrix comprises at least one material selected from the group consisting of gold, aluminum, platinum, copper, titanium, molybdenum, silver, and tungsten.

3. The device of claim 1 , wherein the plurality of pores has a median pore diameter in the range from about 1 nanometer to about 500 nanometers.

4. The device of claim 1 , wherein the filler material comprises a metal.

5. The device of claim 4 , wherein the metal of the filler material comprises at least one selected from the group consisting of gallium, indium, zinc, tin, thallium, copper, bismuth, silicon, mercury and nickel.

6. The device of claim 1 , wherein the filler material has a melting point of less than or equal to 298 K.

7. The device of claim 1 , wherein the electrical contact further comprises a diffusion barrier layer between the solid matrix and the filler material.

8. The device of claim 7 , wherein the barrier layer comprises a material selected from the group consisting of tungsten, titanium, chromium, nickel, molybdenum, niobium, platinum, and manganese.

9. The device of claim 1 , wherein at least one said first and second conductors has a thickness in a range from about 10 nm to about 1000 nm.

10. An electrical contact comprising:

a solid matrix comprising a plurality of pores configured so as to exhibit an open pore structure, wherein the solid matrix comprises gold; and

a filler material disposed within at least a portion of the plurality of pores, the filler material comprising a metal having a melting point of less than or equal to 298 K.

11. The electrical contact of claim 10 , wherein the metal of the filler material comprises at least one selected from the group consisting of gallium, indium, zinc, tin, thallium, copper, bismuth, silicon, mercury, and nickel.

12. The device of claim 10 , wherein the plurality of pores has a median pore diameter in the range from about 1 nanometer to about 500 nanometers.

Assignments (4)
CHANGE OF NAME Recorded Jun 23, 2025
From: GE INTELLECTUAL PROPERTY LICENSING, LLC
To: DOLBY INTELLECTUAL PROPERTY LICENSING, LLC
Reel/Frame 071692/0511 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 23, 2025
From: GENERAL ELECTRIC COMPANY
To: GE INTELLECTUAL PROPERTY LICENSING, LLC
Reel/Frame 071704/0816 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 20, 2025
From: DOLBY INTELLECTUAL PROPERTY LICENSING, LLC
To: EDISON INNOVATIONS, LLC
Reel/Frame 071674/0420 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2010
From: SRINIVASAN, DURAISWAMY; CORDERMAN, REED ROEDER; KEIMEL, CHRISTOPHER FRED; GUNASEKARAN, SOMASUNDARAM; REDDY, SUDHAKAR EDDULA; GOWDA, ARUN VIRUPAKSHA; SUBRAMANIAN, KANAKASABAPATHI; PRAKASH, OM
To: GENERAL ELECTRIC COMPANY
Reel/Frame 025444/0079 →