IP Library Granted Patent US 8,486,192
Granted Patent B2
US 8,486,192 · App. 12/894,724 · Granted Jul 16, 2013

Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,486,192
App. No.
12/894,724
Granted
Jul 16, 2013
Kind
B2
Abstract

Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.

Claims (55)

1. A thermalizing gas injector for injecting one or more gases into a reaction chamber of a deposition system, comprising:

an inlet;

a thermalizing conduit;

a liquid container holding liquid metal reagent therein;

an outlet;

a pathway extending from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet, the thermalizing conduit having a length greater than a shortest distance between the inlet and the liquid container; and

at least one active heating element and at least one passive heating element disposed proximate the thermalizing conduit and the liquid container, the thermalizing conduit surrounding a generally cylindrical space in which the at least one passive heating element is disposed, the at least one active heating element surrounding the thermalizing conduit and the at least one passive heating element, the at least one active heating element and the at least one passive heating element configured to provide thermal energy for heating one or more gases within the thermalizing conduit and the liquid container and to heat one or more gases within the at least one of the thermalizing conduit and the liquid container to a temperature between about 500° C. and about 1,000° C., the at least one passive heating element comprised of at least one of aluminum nitride (AlN), silicon carbide (SIC), and boron carbide (B 4 C).

2. The thermalizing gas injector of claim 1 , wherein the liquid metal reagent comprises at least one of liquid gallium, liquid indium, and liquid aluminum.

3. The thermalizing gas injector of claim 1 , wherein at least one of the thermalizing conduit and the liquid container is at least substantially comprised of quartz.

4. The thermalizing gas injector of claim 1 , wherein the at least one active heating element comprises at least one of a resistive heating element, an inductive heating element, and a radiant heating element.

5. The thermalizing gas injector of claim 1 , wherein the length of the thermalizing conduit is at least about twice the shortest distance between the inlet and the liquid container.

6. The thermalizing gas injector of claim 5 , wherein the length of the thermalizing conduit is at least about four times the shortest distance between the inlet and the liquid container.

7. The thermalizing gas injector of claim 1 , wherein the at least one passive heating element disposed proximate the thermalizing conduit comprises an elongated heating element, and wherein the thermalizing conduit entirely surrounds the elongated heating element.

8. The thermalizing gas injector of claim 7 , wherein the thermalizing conduit surrounding the elongated heating element has a coiled configuration or a serpentine configuration.

9. The thermalizing gas injector of claim 7 , wherein the elongated heating element is generally cylindrical.

10. The thermalizing gas injector of claim 1 , wherein the thermalizing conduit is disposed in a generally cylindrical space between the at least one active heating element and the at least one passive heating element.

11. The thermalizing gas injector of claim 1 , further comprising an outer housing configured to enclose at least the thermalizing conduit and the liquid container.

12. The thermalizing gas injector of claim 11 , wherein the outer housing defines a gas-conducting pathway configured to convey gas through the thermalizing gas injector in a space within the outer housing and outside the thermalizing conduit.

13. The thermalizing gas injector of claim 1 , wherein the at least one passive heating element is located under the liquid container.

14. A deposition system, comprising:

a reaction chamber; and

at least one thermalizing gas injector disposed outside the reaction chamber and configured to inject one or more gases into the reaction chamber, the thermalizing gas injector

comprising:

an inlet;

a thermalizing conduit;

a liquid container holding a liquid metal reagent therein;

an outlet;

a pathway extending from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet, the thermalizing conduit having a length greater than a shortest distance between the inlet and the liquid container; and

at least one active heating element and at least one passive heating element disposed proximate the thermalizing conduit and the liquid container, the thermalizing conduit surrounding a generally cylindrical space in which the at least one passive heating element is disposed, the at least one active heating element surrounding the thermalizing conduit and the at least one passive heating element, the at least one active heating element and the at least one passive heating element configured to heat one or more gases within the thermalizing conduit and the liquid container to a temperature between about 500° C. and about 1,000° C., the at least one passive heating element comprised of at least one of aluminum nitride (AlN), silicon carbide (SIC), and boron carbide (B 4 C).

15. The deposition system of claim 14 , further comprising:

at least one gas source; and

at least one gas inflow conduit configured to carry a source gas from the gas source to the inlet of the at least one thermalizing gas injector.

16. The deposition system of claim 15 , wherein the at least one gas source comprises a source of at least one of GaCl 3 , InCl 3 , and AlCl 3 .

17. The deposition system of claim 14 , wherein the liquid metal reagent comprises at least one of liquid gallium, liquid indium, and liquid aluminum.

18. The deposition system of claim 14 , wherein at least one of the thermalizing conduit and the liquid container is at least substantially comprised of quartz.

19. The deposition system of claim 14 , wherein the at least one active heating element comprises at least one of a resistive heating element, an inductive heating element, and a radiant heating element.

20. The deposition system of claim 14 , wherein the length of the thermalizing conduit is at least about twice the shortest distance between the inlet and the liquid container.

21. The deposition system of claim 14 , wherein the at least one thermalizing gas injector comprises two or more thermalizing gas injectors.

22. The deposition system of claim 21 , wherein the two or more thermalizing gas injectors comprises:

a first thermalizing gas injector, liquid gallium disposed in the liquid container of the first thermalizing gas injector; and

a second thermalizing gas injector, at least one of liquid indium and liquid aluminum disposed in the liquid container of the second thermalizing gas injector.

23. The deposition system of claim 22 , further comprising:

a first gas source configured to supply GaCl 3 to the inlet of the first thermalizing gas injector; and

a second gas source configured to supply at least one of InCl 3 and AlCl 3 to the inlet of the second thermalizing gas injector.

24. The deposition system of claim 14 , further comprising:

another gas injector configured to inject a dopant gas precursor into the reaction chamber, the

another gas injector comprising:

an inlet;

a conduit;

a liquid container configured to hold a liquid dopant reagent therein;

an outlet; and

a pathway extending from the inlet, through the conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet; and

a gas source configured to supply gaseous HCl to the inlet of the another gas injector.

25. The deposition system of claim 24 , further comprising a liquid dopant within the liquid container.

26. The deposition system of claim 25 , wherein the liquid dopant comprises liquid iron.

Assignments (2)
CHANGE OF NAME Recorded Feb 28, 2012
From: S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES; CHEMIN DES FRANQUES; PARC TECHNOLOGIES DES FONTAINES; BERNIN. FRANCE 38190
To: SOITEC
Reel/Frame 028138/0895 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2010
From: BERTRAM, RONALD THOMAS, JR.
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 025196/0387 →