Dimensionally decoupled ball limiting metalurgy
View Patent ↗A method for reducing stress on under ball metallurgy (UBM) is disclosed. A collar is disposed around the ball to provide support, and prevent solder interaction in the undercut areas of the UBM. In one embodiment, the collar is comprised of photosensitive polyimide.
1. A method of forming a ball structure, comprising:
forming a UBM stack on a substrate, the UBM stack comprised of a plurality of layers, wherein the plurality of layers comprises an undercut condition, the substrate having a conductor traversing it, wherein the UBM stack is centered over the conductor;
forming an annular protective collar that circumscribes the UBM stack; and
forming a solder ball on the UBM stack after forming the annular protective collar.
2. The method of claim 1 , wherein the step of forming a UBM stack comprises:
depositing a layer of TiW;
depositing a first copper layer; and
depositing a nickel layer.
3. The method of claim 2 , further comprising the step of depositing a second copper layer.
4. The method of claim 3 , wherein the step of depositing a layer of TiW comprises depositing a TiW layer with a thickness ranging from about 1000 angstroms to about 2000 angstroms.
5. The method of claim 3 , wherein the step of depositing a first copper layer comprises depositing a copper layer with a thickness ranging from about 3000 angstroms to about 4000 angstroms.
6. The method of claim 3 , wherein the step of depositing a nickel layer comprises depositing a nickel layer with a thickness ranging from about 1.5 micrometers to about 3.0 micrometers.
7. The method of claim 3 , wherein the step of depositing a second copper layer comprises depositing a copper layer with a thickness ranging from about 0.5 micrometers to about 1.5 micrometers.
8. The method of claim 1 , wherein the step of forming a protective collar comprises forming a photosensitive polyimide collar.
9. The method of claim 3 , wherein the step of forming a solder ball on the UBM stack comprises forming a solder ball comprised of a tin-silver alloy.
10. The method of claim 9 , wherein the step of forming a solder ball comprises forming a solder ball having a diameter ranging from about 85 micrometers to about 95 micrometers.
11. The method of claim 10 , wherein the step of depositing a nickel layer comprises depositing a nickel layer having a width ranging from about 100 micrometers to about 110 micrometers.
12. The method of claim 10 , wherein the step of depositing a nickel layer comprises depositing a nickel layer having a width ranging from about 1.4 times the diameter of the solder ball to about 2.4 times the diameter of the solder ball.
13. A method of forming a ball structure, comprising:
forming a UBM stack on a substrate, the substrate having a conductor traversing it, wherein the UBM stack is centered over the conductor and formed by:
depositing a layer of TiW;
depositing a first copper layer;
depositing a nickel layer; and
depositing a second copper layer, wherein the nickel layer is wider than the first copper layer, thereby forming an undercut area;
forming an annular protective collar that circumscribes the UBM stack and covers the undercut area, thereby protecting it; and
forming a solder ball on the UBM stack after the step of forming a protective collar.
14. The method of claim 13 , wherein the step of forming a protective collar comprises forming a photosensitive polyimide collar.
15. The method of claim 13 , wherein the step of forming a solder ball on the UBM stack comprises forming a solder ball comprised of a silver-tin alloy.