Image sensors and methods of fabricating the same
An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate.
1. An image sensor comprising:
a substrate having a pixel region including a plurality of unit pixels and a non-pixel region;
at least one first well in the non-pixel region;
an interconnect structure including an interlayer dielectric layer on a first side of the substrate; and
a base well in the non-pixel region and between the at least one first well and a second side of the substrate, wherein the base well does not overlap the unit pixels in the pixel region, and wherein the base well does not contact the interlayer dielectric layer.
2. The image sensor of claim 1 , wherein the at least one first well has a same conductivity type as the base well.
3. The image sensor of claim 2 , wherein the base well has a doping concentration higher than a doping concentration of the at least one first well.
4. The image sensor of claim 1 , further comprising a number of additional first wells coupled to the base well, wherein the number of additional first wells are coupled to a first well-bias through the at least one first base well.
5. The image sensor of claim 1 , further comprising:
at least one second well between two of the first wells and having a different conductivity type than the at least one first well.
6. The image sensor of claim 1 , wherein the base well is a single layer in the non-pixel region.
7. The image sensor of claim 1 , further comprising:
a pinning layer on the second side of the substrate.
8. The image sensor of claim 1 , further comprising:
a support substrate on the interconnect structure.
9. The image sensor of claim 1 , wherein the substrate is an epitaxy (epi) layer.
10. An image sensor comprising:
a substrate having a pixel region including a plurality of unit pixels and a non-pixel region;
a plurality of first wells in the non-pixel region;
an interconnect structure including interlayer dielectric layer on a first side of the substrate; and
a base well in the non-pixel region, the base well having a higher doping concentration than a doping concentration of the plurality of first wells, wherein the base well does not overlap the plurality of unit pixels in the pixel region, and wherein
the base well does not contact the interlayer dielectric layer,
the plurality of first wells are coupled to the base well, and
at least one of the first wells is coupled to a first well-bias through another one of the first wells.
11. The image sensor of claim 10 , wherein each of the plurality of first wells and the base well have a same conductivity type.
12. The image sensor of claim 10 , further comprising:
at least one second well between two adjacent first wells among the plurality of first wells and having a different conductivity type than the two adjacent first wells.
13. The image sensor of claim 10 , wherein the base well is a single layer between each of the plurality of first wells and a second side of the substrate.
14. A mobile device comprising the image sensor of claim 1 .
15. A camera comprising the image sensor of claim 1 .
16. A computer system comprising the image sensor of claim 1 .
17. A mobile device comprising the image sensor of claim 10 .
18. A camera comprising the image sensor of claim 10 .
19. A computer system comprising the image sensor of claim 10 .