Vertically stacked field programmable nonvolatile memory and method of fabrication
View Patent ↗A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
1. A memory cell comprising:
a first conductor;
a second conductor;
a steering element that is capable of providing substantially unidirectional current flow; and
a state change element coupled in series with the steering element, wherein the state change element is capable of retaining a programmed state, and wherein the steering element and state change element are vertically aligned with one another.
2. The memory cell of claim 1 , wherein the steering element comprises a diode.
3. The memory cell of claim 1 , wherein the steering element comprises a p-n diode.
4. The memory cell of claim 1 , wherein the steering element comprises a p-i-n diode.
5. The memory cell of claim 1 , wherein the steering element comprises a Schottky diode.
6. The memory cell of claim 1 , wherein the state change element comprises a resistance-switching element.
7. The memory cell of claim 1 , wherein the state change element is capable of having a high impedance state, and a low-impedance state.
8. The memory cell of claim 1 , wherein the state change element is capable of having two resistance states.
9. The memory cell of claim 1 , wherein the state change element is capable of having more than two resistance states.
10. A memory array comprising a plurality of the memory cells of claim 1 .
11. A memory cell comprising:
a first conductor;
a second conductor; and
a pillar comprising a steering element that is capable of providing substantially unidirectional current flow, and a state change element that is capable of retaining a programmed state.
12. The memory cell of claim 11 , wherein the steering element comprises a diode.
13. The memory cell of claim 11 , wherein the steering element comprises a p-n diode.
14. The memory cell of claim 11 , wherein the steering element comprises a p-i-n diode.
15. The memory cell of claim 11 , wherein the steering element comprises a Schottky diode.
16. The memory cell of claim 11 , wherein the state change element comprises a resistance-switching element.
17. The memory cell of claim 11 , wherein the state change element is capable of having a high impedance state, and a low-impedance state.
18. The memory cell of claim 11 , wherein the state change element is capable of having two resistance states.
19. The memory cell of claim 11 , wherein the state change element is capable of having more than two resistance states.
20. A memory array comprising a plurality of the memory cells of claim 11 .