Planar coil and method of making the same
View Patent ↗A method of making a planar coil is disclosed in the present invention. First, a substrate having a trench is provided. Then, a barrier and a seed layer are formed on the substrate in sequence. An isolative layer is used for guiding a conductive material to flow into a lower portion of the trench such that accumulation of the conductive material at opening of the trench is prevented before the lower portion of the trench is completely filled up, thereby avoiding gap formation in the trench.
1. A planar coil, comprising:
a substrate having a trench formed therein, the trench having an aspect ratio of no less than 20:1;
a barrier on the substrate; and
a seed layer on the barrier in the trench;
wherein the trench is filled up with a conductive material to form a coil body having a lower portion and an upper portion which is near an opening of the trench, and wherein the upper portion has a width shorter than that of the lower portion.
2. The planar coil according to claim 1 , wherein an isolative material is disposed between the upper portion of the planar coil and the seed layer.
3. The planar coil according to claim 2 , wherein the isolative material comprises silicon dioxide.
4. The planar coil according to claim 1 , wherein the substrate is made of silicon.
5. The planar coil according to claim 1 , wherein the barrier is made of silicon dioxide.
6. The planar coil according to claim 1 , wherein the seed layer is made of copper, titanium, or a mixture thereof.
7. The planar coil according to claim 1 , wherein the conductive material is copper.
8. The planar coil according to claim 1 , wherein the substrate has a hole through the center to form a loop-shaped planar coil.
9. A planar coil, comprising:
a substrate having a trench formed therein, and the trench being filled up with a conductive material;
a barrier on the substrate;
a seed layer on the barrier in the trench; and
an isolative layer, disposed between the conductive material and the seed layer.