Dicing-free LED fabrication

1. A method, comprising:

providing a substrate having opposite first and second sides, wherein the first side has a semiconductor layer formed thereon;

forming a photoresist layer over the semiconductor layer such that an entire portion of a bottom surface of the photoresist layer is formed on a top surface of the semiconductor layer;

patterning the photoresist layer into a plurality of photoresist components, the photoresist components being separated by openings;

filling the openings with a plurality of conductive components; and

separating the semiconductor layer into a plurality of dies using a radiation process that includes selectively radiating a plurality of first regions of the substrate from the second side, each of the first regions of the substrate being aligned with a respective one of the conductive components.

2. The method of claim 1 , wherein the photoresist layer is formed in a street line region of the semiconductor layer.

3. The method of claim 1 ,

wherein the radiation process is carried out in a manner so that a plurality of second regions of the substrate are unradiated, each of the second regions being aligned with one of the photoresist components; and

wherein as a result of the radiating, the first regions of the substrate become de-coupled from the semiconductor layer, and the second regions of the substrate remain coupled to the semiconductor layer.

4. The method of claim 3 , wherein the radiating causes a nitrogen gas to be released at interfaces between the first regions of the substrate and the semiconductor layer; and further including: removing the substrate along with portions of the semiconductor layer that are aligned with and coupled to the second regions of the substrate.

5. The method of claim 3 , further including, before the radiating:

forming a glue material over the conductive components and the photoresist components;

forming a light-to-heat conversion layer on a glass substrate; and

bonding the glass substrate to the glue material in a manner so that the light-to-heat conversion layer is disposed in between the glass substrate and the glue material.

6. The method of claim 5 , further including, after the radiating:

performing a laser scan through the glass substrate to cause heating in the light-to-heat conversion layer, thereby separating the glass substrate from the light-to-heat conversion layer;

de-bonding the glass substrate; and

thereafter removing the glue material, the removing the glue material also removing the photoresist components.

7. The method of claim 1 , wherein:

the substrate includes a sapphire material;

the conductive component is thermally conductive; and

the semiconductor layer includes a p-type gallium nitride layer, an n-type gallium nitride layer, and a multiple quantum well that is disposed in between the p-type gallium nitride layer and the n-type gallium nitride layer.

8. The method of claim 1 , further including, before the forming the photoresist layer, forming one of: an ohmic layer, a reflective layer, and a capped layer over the semiconductor layer; and wherein the forming the photoresist layer is carried out in a manner so that the semiconductor layer and the photoresist layer are disposed on opposite sides of the ohmic layer.

9. A method, comprising:

forming a patternable layer over a semiconductor layer, the semiconductor layer being disposed over a substrate;

patterning the patternable layer to form a plurality of patternable features, the patternable features being spaced apart from one another;

forming a plurality of conductive features between the patternable features;

forming a glue material over the conductive features;

forming a light-to-heat conversion layer on a glass substrate; and

bonding the glue material to the light-to-heat conversion layer and the glass substrate; and

dividing the semiconductor layer into a plurality of different portions, wherein the dividing is performed at least in part by selectively radiating a plurality of regions of the substrate that are each aligned with a respective one of the conductive features.

10. The method of claim 9 , wherein the semiconductor layer is formed on a first side of the substrate, and wherein the radiating is performed from a second side of the substrate opposite the first side.

11. The method of claim 9 , wherein the patternable layer includes a photoresist material and is formed over a scribe line region of the substrate.

12. The method of claim 9 , wherein the dividing is performed such that regions of the substrate aligned with the patternable features are not radiated.

13. The method of claim 9 , wherein the plurality of regions of the substrate decouples from the semiconductor layer after being radiated.

14. The method of claim 9 , wherein the semiconductor layer includes:

a p-type gallium nitride layer;

an n-type gallium nitride layer; and

a multiple quantum well located between the p-type gallium nitride layer and the n-type gallium nitride layer.

15. A method, comprising:

forming a patterned mask over a semiconductor layer that is disposed on a substrate, wherein the patterned mask is formed to have a bottom surface, and wherein an entire portion of the bottom surface of the patterned mask is formed over a topmost surface of the semiconductor layer, the patterned mask containing a plurality of openings;

forming a plurality of conductive devices in the openings; and

transforming the semiconductor layer into a plurality of dies at least in part by applying radiation to a plurality of first regions of the substrate that are each aligned with a respective one of the conductive devices while leaving a plurality of second regions of the substrate unradiated, wherein the radiation is applied so that a nitrogen gas is released at interfaces between the first regions of the substrate and the semiconductor layer.

16. The method of claim 15 , wherein the patterned mask includes a patterned photoresist layer, and wherein the patterned mask is formed over a street line region of the semiconductor layer.

17. The method of claim 15 , further comprising: removing the substrate along with unradiated portions of the semiconductor layer.

18. The method of claim 15 , further comprising:

forming a glue material over the conductive devices and the patternable mask;

attaching the glue material to a glass substrate having a light-to-heat conversion layer disposed thereon, wherein the light-to-heat conversion layer is disposed in between the glass substrate and the glue material;

performing a laser scan through the glass substrate to generate heat in the light-to-heat conversion layer, thereby separating the glass substrate from the light-to-heat conversion layer;

detaching the glass substrate; and

removing the glue material along with the patternable mask.

19. The method of claim 15 , wherein:

the substrate includes a sapphire material;

the conductive devices include metal; and

the semiconductor layer includes a p-type gallium nitride layer, an n-type gallium nitride layer, and a multiple quantum well that is disposed in between the p-type gallium nitride layer and the n-type gallium nitride layer.

20. The method of claim 15 , wherein the radiation includes a 248 nanometer KrF laser.