IP Library › Granted Patent US 8,525,230
Granted Patent B2
US 8,525,230 · App. 12/901,988 · Granted Sep 3, 2013

Field-effect transistor with compositionally graded nitride layer on a silicaon substrate

Inventors: Hugues Marchand (Somerville, MA); Brendan J. Moran (San Jose, CA); Umesh K. Mishra (Montecito, CA); James S. Speck (Goleta, CA)
Assignee: The Regents of the University of California
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Quick Facts
Patent No.
US 8,525,230
App. No.
12/901,988
Granted
Sep 3, 2013
Kind
B2
Abstract

A field effect transistor including a compositionally graded group-III nitride layer on a silicon substrate.

Claims (17)

1. A field-effect transistor comprising a group-III nitride on a silicon substrate, wherein the field-effect transistor:

(i) is capable of supporting a current per unit of gate width of the field-effect transistor that is less than about 525 mA/mm, and

(ii) has a transconductance per unit of gate width of the field-effect transistor that is about 100 mS/mm or less.

2. The field-effect transistor of claim 1 , wherein the group-III nitride is a graded group-III nitride layer.

3. The field-effect transistor of claim 2 , wherein the graded group-III nitride layer is a single crystal graded group-III nitride layer.

4. The field-effect transistor of claim 1 , further comprising an Al x Ga 1-x N layer.

5. A field-effect transistor comprising a group-III nitride on a silicon substrate, wherein the field-effect transistor has a transconductance per unit of gate width of the field-effect transistor that is about 100 mS/mm or less.

6. The field-effect transistor of claim 5 , wherein the group-III nitride is a graded group-III nitride layer.

7. The field-effect transistor of claim 6 , wherein the graded group-III nitride layer is a single crystal graded group-III nitride layer.

8. The field-effect transistor of claim 5 , further comprising an Al x G 1-x N layer.

9. The field-effect transistor of claim 5 , wherein a saturation current of the field-effect transistor is at least 25 mA.

10. The field-effect transistor of claim 9 , wherein a transconductance of the field-effect transistor is at least 5 mS.

11. The field-effect transistor of claim 9 , wherein the group-III nitride is a graded group-III nitride layer.

12. The field-effect transistor of claim 9 , further comprising an Al x Ga 1-x N layer.

13. The field-effect transistor of claim 5 , wherein a transconductance of the field-effect transistor is at least 5 mS.

14. The field-effect transistor of claim 13 , wherein the group-III nitride is a graded group-III nitride layer.

15. The field-effect transistor of claim 13 , further comprising an Al x Ga 1-x N layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2011
From: MARCHAND, HUGUES; MORAN, BRENDAN J.; MISHRA, UMESH K.; SPECK, JAMES S.
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 025679/0646 →
Continuity (4)
Continuation 12471134 · May 22, 2009
Continuation 09922122 · Aug 3, 2001
Provisional Application 60222837 · Aug 4, 2000
Related Publication 20110108886A1 · May 12, 2011