Liquid crystal display device, semiconductor device, and electronic appliance
View Patent ↗The liquid crystal display device includes an island-shaped first semiconductor film 102 which is formed over a base insulating film 101 and in which a source 102 d , a channel forming region 102 a , and a drain 102 b are formed; a first electrode 102 c which is formed of a material same as the first semiconductor film 102 to be the source 102 d or the drain 102 b and formed over the base insulating film 101 ; a second electrode 108 which is formed over the first electrode 102 c and includes a first opening pattern 112 ; and a liquid crystal 110 which is provided over the second electrode 108.
1. A liquid crystal display device comprising:
a first substrate;
a first gate electrode over the first substrate;
a gate insulating layer over the first gate electrode;
a semiconductor layer comprising a channel formation region over the first gate electrode with the gate insulating layer interposed therebetween;
a common electrode over the gate insulating layer;
an insulating layer over the semiconductor layer and the common electrode;
a pixel electrode over the insulating layer;
a liquid crystal layer over the pixel electrode; and
a second substrate over the liquid crystal layer,
wherein each of the semiconductor layer and the common electrode comprises indium and zinc,
wherein the pixel electrode overlaps with the common electrode with the insulating layer interposed therebetween to form a capacitor,
wherein the pixel electrode is electrically connected to the semiconductor layer,
wherein the common electrode comprises the same material as the semiconductor layer, and
wherein the semiconductor layer and the common electrode have substantially the same thickness.
2. The liquid crystal display device according to claim 1 , wherein the insulating layer comprises nitrogen.
3. The liquid crystal display device according to claim 1 , wherein the liquid crystal layer is configured to be driven by an electric field generated between the pixel electrode and the common electrode.
4. The liquid crystal display device according to claim 1 , wherein each of the semiconductor layer and the common electrode further comprises gallium.
5. The liquid crystal display device according to claim 1 , wherein each of the semiconductor layer and the common electrode comprises a-InGaZnO.
6. The liquid crystal display device according to claim 1 , wherein the gate insulating layer comprises nitrogen.
7. The liquid crystal display device according to claim 1 , wherein the insulating layer comprises an opening overlapping with the common electrode.
8. The liquid crystal display device according to claim 1 , further comprising a second gate electrode over the first substrate, wherein the semiconductor layer is provided over the second gate electrode with the gate insulating layer interposed therebetween.
9. The liquid crystal display device according to claim 1 , further comprising a wiring over the first substrate,
wherein the gate insulating layer is over the wiring, and
wherein the wiring is electrically connected to the common electrode.
10. The liquid crystal display device according to claim 1 , wherein the common electrode comprises an impurity to enhance a conductivity of the common electrode.
11. The liquid crystal display device according to claim 10 , wherein the impurity is at least one selected from the group consisting of phosphorus, boron, gallium, and arsenic.
12. The liquid crystal display device according to claim 1 , wherein the semiconductor layer and the common electrode are formed by a process comprising the steps of:
forming a semiconductor film over the gate insulating layer; and
etching the semiconductor film to form the semiconductor layer and the common electrode.
13. A liquid crystal display device comprising:
a substrate;
a first gate electrode over the substrate;
a gate insulating layer over the first gate electrode;
a semiconductor layer over the first gate electrode with the gate insulating layer interposed therebetween;
a first electrode over the gate insulating layer;
an insulating layer over the semiconductor layer and the first electrode;
a pixel electrode over the insulating layer; and
a liquid crystal layer over the pixel electrode,
wherein each of the semiconductor layer and the first electrode comprises indium and zinc,
wherein the pixel electrode overlaps with the first electrode with the insulating layer interposed therebetween to form a capacitor,
wherein the pixel electrode is electrically connected to the semiconductor layer,
wherein the first electrode comprises the same material as the semiconductor layer, and
wherein the semiconductor layer and the first electrode have substantially the same thickness.
14. The liquid crystal display device according to claim 13 , wherein the insulating layer comprises nitrogen.
15. The liquid crystal display device according to claim 13 , wherein the liquid crystal layer is configured to be driven by an electric field generated between the pixel electrode and the first electrode.
16. The liquid crystal display device according to claim 13 , wherein each of the semiconductor layer and the first electrode further comprises gallium.
17. The liquid crystal display device according to claim 13 , wherein each of the semiconductor layer and the first electrode comprises a-InGaZnO.
18. The liquid crystal display device according to claim 13 , wherein the gate insulating layer comprises nitrogen.
19. The liquid crystal display device according to claim 13 , wherein the insulating layer comprises an opening overlapping with the first electrode.
20. The liquid crystal display device according to claim 13 , further comprising a second gate electrode over the substrate, wherein the semiconductor layer is provided over the second gate electrode with the gate insulating layer interposed therebetween.
21. The liquid crystal display device according to claim 13 , further comprising a wiring over the substrate,
wherein the gate insulating layer is over the wiring, and
wherein the wiring is electrically connected to the first electrode.
22. The liquid crystal display device according to claim 13 , wherein the first electrode comprises an impurity to enhance a conductivity of the first electrode.
23. The liquid crystal display device according to claim 22 , wherein the impurity is at least one selected from the group consisting of phosphorus, boron, gallium, and arsenic.
24. The liquid crystal display device according to claim 13 , wherein the semiconductor layer and the first electrode are formed by a process comprising the steps of:
forming a semiconductor film over the gate insulating layer; and
etching the semiconductor film to form the semiconductor layer and the first electrode.
25. A liquid crystal display device comprising:
a substrate;
a first gate electrode over the substrate;
a gate insulating layer over the first gate electrode;
a semiconductor layer over the first gate electrode with the gate insulating layer interposed therebetween;
a first electrode on and in contact with the gate insulating layer;
an insulating layer over the semiconductor layer and the first electrode;
a pixel electrode over the insulating layer; and
a liquid crystal layer over the pixel electrode,
wherein each of the semiconductor layer and the first electrode comprises indium and zinc,
wherein the pixel electrode overlaps with the first electrode with the insulating layer interposed therebetween to form a capacitor,
wherein the pixel electrode is electrically connected to the semiconductor layer,
wherein the first electrode comprises the same material as the semiconductor layer, and
wherein the semiconductor layer and the first electrode have substantially the same thickness.
26. The liquid crystal display device according to claim 25 , wherein the insulating layer comprises nitrogen.
27. The liquid crystal display device according to claim 25 , wherein the liquid crystal layer is configured to be driven by an electric field generated between the pixel electrode and the first electrode.
28. The liquid crystal display device according to claim 25 , wherein each of the semiconductor layer and the first electrode further comprises gallium.
29. The liquid crystal display device according to claim 25 , wherein each of the semiconductor layer and the first electrode comprises a-InGaZnO.
30. The liquid crystal display device according to claim 25 , wherein the gate insulating layer comprises nitrogen.
31. The liquid crystal display device according to claim 25 , wherein the insulating layer comprises an opening overlapping with the first electrode.
32. The liquid crystal display device according to claim 25 , further comprising a second gate electrode over the substrate, wherein the semiconductor layer is provided over the second gate electrode with the gate insulating layer interposed therebetween.
33. The liquid crystal display device according to claim 25 , further comprising a wiring over the substrate,
wherein the gate insulating layer is over the wiring, and
wherein the wiring is electrically connected to the first electrode.
34. The liquid crystal display device according to claim 25 , wherein the first electrode comprises an impurity to enhance a conductivity of the first electrode.
35. The liquid crystal display device according to claim 34 , wherein the impurity is at least one selected from the group consisting of phosphorus, boron, gallium, and arsenic.
36. The liquid crystal display device according to claim 25 , wherein the semiconductor layer and the first electrode are formed by a process comprising the steps of:
forming a semiconductor film over the gate insulating layer; and
etching the semiconductor film to form the semiconductor layer and the first electrode.
37. A liquid crystal display device comprising:
a substrate;
a first gate electrode over the substrate;
a gate insulating layer over the first gate electrode;
a semiconductor layer over the first gate electrode with the gate insulating layer interposed therebetween;
a first electrode over the gate insulating layer;
an insulating layer over the semiconductor layer and the first electrode;
a pixel electrode over the insulating layer; and
a liquid crystal layer over the pixel electrode;
wherein each of the semiconductor layer and the first electrode comprises indium and zinc,
wherein the pixel electrode overlaps with the first electrode with the insulating layer interposed therebetween to form a capacitor,
wherein the first electrode is in contact with the insulating layer,
wherein the first electrode comprises the same material as the semiconductor layer, and
wherein the semiconductor layer and the first electrode have substantially the same thickness.
38. The liquid crystal display device according to claim 37 , wherein the insulating layer comprises nitrogen.
39. The liquid crystal display device according to claim 37 , wherein the liquid crystal layer is configured to be driven by an electric field generated between the pixel electrode and the first electrode.
40. The liquid crystal display device according to claim 37 , wherein each of the semiconductor layer and the first electrode further comprises gallium.
41. The liquid crystal display device according to claim 37 , wherein each of the semiconductor layer and the first electrode comprises a-InGaZnO.
42. The liquid crystal display device according to claim 37 , wherein the gate insulating layer comprises nitrogen.
43. The liquid crystal display device according to claim 37 , wherein the insulating layer comprises an opening overlapping with the first electrode.
44. The liquid crystal display device according to claim 37 , further comprising a second gate electrode over the substrate, wherein the semiconductor layer is provided over the second gate electrode with the gate insulating layer interposed therebetween.
45. The liquid crystal display device according to claim 37 , further comprising a wiring over the substrate,
wherein the gate insulating layer is over the wiring, and
wherein the wiring is electrically connected to the first electrode.
46. The liquid crystal display device according to claim 37 , wherein the first electrode comprises an impurity to enhance a conductivity of the first electrode.
47. The liquid crystal display device according to claim 46 , wherein the impurity is at least one selected from the group consisting of phosphorus, boron, gallium, and arsenic.
48. The liquid crystal display device according to claim 37 , wherein the semiconductor layer and the first electrode are formed by a process comprising the steps of:
forming a semiconductor film over the gate insulating layer; and
etching the semiconductor film to form the semiconductor layer and the first electrode.