Optoelectronic semiconductor device and method of fabrication

1. An article comprising:

a substrate comprising a first plurality of surface features that is arranged in a first arrangement that is periodic in two dimensions, wherein the periodicity in at least one dimension is based on a wavelength of light within a spectral range of interest;

a first composite layer disposed on the substrate, the first composite layer comprising a plurality of domes that is arranged in the first arrangement, wherein the first composite layer is an optically active layer that is characterized by a first band-gap wavelength, λ bg1 ; and

a first layer that is substantially reflective for light having a wavelength within the range of approximately 400 nm to approximately 1600 nm, the first layer being between the substrate and the first composite layer, and the first layer comprising a second plurality of surface features that is arranged in the first arrangement, wherein the second plurality of surface features is operative for enhancing light-absorption in the first composite layer.

2. The article of claim 1 wherein the first arrangement is a close-packed arrangement.

3. The article of claim 1 wherein the first arrangement has a first periodicity that is greater than 2λ bg1 .

4. The article of claim 1 further comprising a second layer that is substantially conformal with the first composite layer, wherein the second layer comprises a first material that has a refractive index that is lower than the refractive index of the first composite layer, and wherein the first composite layer interposes the substrate and the second layer, and further wherein second layer and first composite layer collectively have a lower reflectivity than the first composite layer for light having a wavelength within the range of approximately 400 nm to approximately 1600 nm.

5. The article of claim 1 further comprising a second layer that is substantially conformal with the first composite layer, wherein the second layer comprises a first material that has a refractive index that is lower than the refractive index of the first composite layer, and wherein the first composite layer interposes the substrate and the second layer, and further wherein second layer and first composite layer collectively have a lower reflectivity than the first composite layer for light having a wavelength within the range of approximately 400 nm to approximately 800 nm.

6. The article of claim 5 wherein the second layer has an effective graded refractive index profile.

7. The article of claim 1 wherein the first composite layer and the first layer collectively define a photonic waveguide.

8. The article of claim 1 further comprising a second layer that is substantially conformal with the first composite layer, wherein the second layer comprises a first material that has a refractive index that is lower than the refractive index of the first composite layer;

wherein the first composite layer interposes the first layer and the second layer; and

wherein first composite layer, first layer, and second layer collectively define a photonic waveguide.

9. The article of claim 1 wherein the first composite layer comprises a solar cell layer structure.

10. The article of claim 9 wherein the solar cell layer structure comprises p-doped hydrogenated amorphous silicon disposed on substantially intrinsic hydrogenated amorphous silicon disposed on n-doped hydrogenated amorphous silicon.

11. The article of claim 1 wherein the first composite layer has a thickness within the range of approximately 50 nm to approximately 5000 nm.

12. The article of claim 11 wherein the first composite layer has a thickness within the range of approximately 200 nm to approximately 500 nm.

13. The article of claim 1 further comprising a second composite layer comprising a plurality of domes, wherein the second composite layer is an optically active layer that is characterized by the first band gap wavelength, λ bg1 , and wherein the second composite layer is disposed on the first composite layer, and further wherein each of the first composite layer and second composite layer comprises a solar cell layer structure.

14. The article of claim 1 further comprising a second composite layer comprising a plurality of domes, wherein the second composite layer is an optically active layer that is characterized by a second band gap wavelength, λ bg2 , and wherein the second composite layer is disposed on the first composite layer, and further wherein each of the first composite layer and second composite layer comprises a solar cell layer structure.

15. The article of claim 1 further comprising a surface that is characterized by a water-contact angle that is greater than or equal to 140°.

16. A method comprising:

providing a substrate having an array of projections that is arranged in a first arrangement that is periodic in two dimensions;

forming a first layer on the substrate such that the first layer includes a plurality of surface features that are arranged in the first arrangement, wherein the first layer is substantially reflective for light having a wavelength within the range of approximately 400 nm to approximately 1600 nm; and

forming a first composite layer disposed on the first layer, wherein the first composite layer comprises a plurality of domes, each of the plurality of domes being formed on a different one of the array of projections, and wherein the first composite layer is an optically active layer this is characterized by a first band gap wavelength, λ bg1 .

17. The method of claim 16 wherein the substrate is provided such that the array of projections has a first periodicity that is less than or equal to λ bg1 .

18. The method of claim 16 wherein the substrate is provided by operations comprising:

forming a mask on the substrate, wherein mask comprises a first material that has a first etch rate in an etchant, and wherein the substrate comprises a second material that has a second etch rate in the etchant, and further wherein the second etch rate is greater than the first etch rate; and

etching the mask and substrate in the etchant.

19. The method of claim 18 wherein the mask is formed by disposing a monolayer of particles of the first material on a surface of the substrate.

20. The method of claim 16 wherein the first composite layer is formed by conformally depositing at least one semiconductor layer on the substrate such that each dome of the plurality of domes is formed on a different projection of the array of projections.

21. The method of claim 16 wherein the first layer is formed such that it is substantially reflective for light having a wavelength within the range of approximately 400 nm to approximately 800 nm.

22. The method of claim 16 wherein the first layer is formed such that it comprises a surface modulation that induces enhanced light absorption in the first composite layer.

23. The method of claim 16 wherein the first layer is formed such that it comprises a photonic waveguide for receiving and scattering light that has transited the first composite layer.

24. The method of claim 16 further comprising forming a second layer that is substantially conformal with the first composite layer, wherein the first composite layer interposes the second layer and the substrate, and wherein the second layer comprises a first material that has a refractive index that is lower than the refractive index of the first composite layer, and further wherein the second layer and first composite layer collectively have a lower reflectivity than the first composite layer for light having a wavelength within the range of approximately 400 nm to approximately 800 nm.

25. The method of claim 16 further comprising:

forming a second layer that is substantially conformal with the first composite layer, wherein the first composite layer interposes the second layer and the substrates, and wherein the second layer is electrically conductive;

forming a second composite layer that is substantially conformal with the second layer, wherein second layer interposes the first composite layer and the second composite layer, and wherein the second composite layer plurality of domes, and wherein the second composite layer is an optically active layer this is characterized by the first band gap wavelength, λ bg1 .

26. The method of claim 16 further comprising:

forming a second layer that is substantially conformal with the first composite layer, wherein the first composite layer interposes the second layer and the substrates, and wherein the second layer is electrically conductive;

forming a second composite layer that is substantially conformal with the second layer, wherein second layer interposes the first composite layer and the second composite layer, and wherein the second composite layer plurality of domes, and wherein the second composite layer is an optically active layer this is characterized by a second band gap wavelength, λ bg2 .

27. The method of claim 16 further comprising forming a second layer, wherein the first composite layer interposes the second layer and a substrate, and wherein the second layer comprises a surface that is characterized by a water-contact angle that is greater than or equal to 140°.

28. The method of claim 16 wherein the first composite layer is formed by conformally depositing a plurality of semiconductor layers, wherein the plurality of semiconductor layers collectively define a solar cell layer structure.

29. The method of claim 16 wherein the first composite layer is formed by operations comprising:

conformally depositing a first semiconductor layer, wherein the first semiconductor layer comprises n-doped hydrogenated amorphous silicon;

conformally depositing a second layer of semiconductor on the first semiconductor layer, wherein the first composite layer of semiconductor comprises substantially intrinsic hydrogenated amorphous silicon; and

conformally depositing a third layer of semiconductor on the second semiconductor layer, wherein the third layer of semiconductor comprises p-doped hydrogenated amorphous silicon.

30. The method of claim 16 wherein the first composite layer is formed by conformally depositing a plurality of semiconductor layers, wherein the plurality of semiconductor layers collectively define a light-emitting diode layer structure.

31. The method of claim 16 wherein the first composite layer is formed by conformally depositing a plurality of semiconductor layers, wherein the plurality of semiconductor layers collectively define a photodetector layer structure.

32. The method of claim 16 wherein the first composite layer is formed by conformally depositing a plurality of semiconductor layers, wherein the plurality of semiconductor layers collectively define an optical modulator layer structure.