Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus
View Patent ↗The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
1. The ultraviolet detecting device comprising:
a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, said silicon semiconductor layer being formed over an insulating layer;
lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer;
an interlayer insulating film formed over the silicon semiconductor layer;
a first filter layer made of silicon nitride, said first filter layer being formed over the interlayer insulating film provided over the first photodiode and allowing light lying in a wavelength range of an UV-B wave or higher to pass therethrough; and
a second filter layer made of silicon nitride, said second filter layer allowing light lying in a wavelength range of an UV-A wave or higher to pass therethrough,
wherein the first filter layer and the second filter layer are stacked over the second photodiode with the interlayer insulating film interposed therebetween.
2. The ultraviolet detecting device according to claim 1 , wherein of the stacked first and second filter layers, the second filter layer is formed on the second photodiode side, and the first filter layer is stacked over the second filter layer.