Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element coupled to the steering element by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
1. A method of forming a memory cell, the method comprising:
forming a steering element above a substrate, wherein forming the steering element comprises forming a vertical polycrystalline diode;
selectively forming a reversible resistance-switching element coupled to the steering element by:
forming a material layer on the substrate;
etching the material layer; and
oxidizing the etched material layer to form a reversible resistance-switching material; and
forming a silicide, silicide-germanide or germanide region in contact with polycrystalline material of the vertical polycrystalline diode so that the polycrystalline material is in a low-resistivity state.
2. The method of claim 1 , wherein the material layer comprises one or more of Ta, TaN, Nb, NbN, Al, AlN, Hf, HfN, V, and VN.
3. The method of claim 1 , wherein the reversible resistance-switching material comprises one or more of Ta 2 O 5 , Nb 2 O 5 , Al 2 O 3 , HfO 2 , and V 2 O 5 .
4. The method of claim 1 , wherein forming the steering element comprises forming a p-n diode or a p-i-n diode.
5. The method of claim 1 , wherein selectively forming the reversible resistance-switching element comprises forming a reversible resistance-switching element having an oxide thickness of about 500 angstroms or less.
6. The method of claim 1 , wherein selectively forming the reversible resistance-switching element comprises forming a reversible resistance-switching element having an oxide thickness of about 300 angstroms or less.
7. The method of claim 1 , further comprising coupling the steering element and reversible resistance-switching element in series.
8. A memory cell formed according to the method of claim 1 .
9. A method of forming a memory cell, the method comprising:
forming a first conductor above a substrate;
selectively forming a reversible resistance-switching element above the first conductor by:
forming a material layer on the substrate;
etching the material layer; and
oxidizing the etched material layer to form a reversible resistance-switching material;
forming a diode above the first conductor, wherein forming the diode comprises forming a vertical polycrystalline diode;
forming a second conductor above the diode and the reversible resistance-switching element; and
forming a silicide, silicide-germanide or germanide region in contact with polycrystalline material of the vertical polycrystalline diode so that the polycrystalline material is in a low-resistivity state.
10. The method of claim 9 , wherein the material layer comprises one or more of Ta, TaN, Nb, NbN, Al, AlN, Hf, HfN, V, and VN.
11. The method of claim 9 , wherein the reversible resistance-switching material comprises one or more of Ta 2 O 5 , Nb 2 O 5 , Al 2 O 3 , HfO 2 , and V 2 O 5 .
12. The method of claim 9 , wherein selectively forming the reversible resistance-switching element comprises forming a reversible resistance-switching element having an oxide thickness of about 500 angstroms or less.
13. The method of claim 9 , wherein selectively forming the reversible resistance-switching element comprises forming a reversible resistance-switching element having an oxide thickness of about 300 angstroms or less.
14. The method of claim 9 , further comprising coupling the diode and the reversible resistance-switching element in series.
15. A memory cell formed according to the method of claim 9 .