TARGETS AND PROCESSES FOR FABRICATING SAME
In one embodiment, the present disclosure provides a target or mold having one or more support arms coupled to a substrate. The support arm can be used in handling or positioning a target. In another embodiment, the present disclosure provides target molds, targets produced using such molds, and a method for producing the targets and molds. In various implementations, the targets are formed in a number of disclosed shapes, including a funnel cone, a funnel cone having an extended neck, those having Gaussian-profile, a cup, a target having embedded metal slugs, metal dotted foils, wedges, metal stacks, a Winston collector having a hemispherical apex, and a Winston collector having an apex aperture. In yet another embodiment, the present disclosure provides a target mounting and alignment system.
1 . A target comprising:
a metal layer;
a substrate; and
a support arm coupled to the metal layer and the substrate.
2 . The target of claim 1 , wherein the metal layer has a thickness of between about 1 μm and about 20 μm.
3 . The target of claim 1 , wherein the metal layer has a cross sectional width of less than about 100 μm.
4 . The target of claim 1 , wherein the metal layer has a cross sectional width of less than about 50 μm.
5 . The target of claim 1 , wherein the metal layer has a cross sectional width of less than about 25 μm.
6 . The target of claim 1 , wherein the support arm is one of a plurality of support arms coupled to the metal layer and the substrate.
7 . The target of claim 1 , wherein the support arm has a cross sectional area of less than about 15 μm 2 .
8 . The target of claim 1 , wherein the support arm has a cross sectional area of less than about 10 μm 2 .
9 . The target of claim 1 , wherein the support arm has a cross sectional area of less than about 2 μm 2 .
10 . The target of claim 1 , wherein the support arm has a cross sectional area of about 1 μm 2 .
11 . A method of forming a laser target comprising:
applying a silicon nitride layer to the front side of a silicon wafer having front and back sides;
applying a mask layer to the silicon nitride layer;
forming one or more apertures in the mask layer, the apertures defining a support shape;
etching at least a portion of the silicon nitride layer under at least one of the apertures;
removing the mask;
depositing a metal layer on the silicon wafer to form a target shape; and
removing at least a portion of the silicon from the back side of the silicon wafer, wherein the support structure connects the target shape to the silicon wafer.