Line edge roughness measuring technique and test structure
View Patent ↗A test structure is presented test structure on a substrate for monitoring a LER and/or LWR effect, said test structure comprising an array of features manufactured with amplified LER and/or LWR effect.
1. A test structure on a substrate for monitoring a LER (Line Edge Roughness) and/or LWR effect (Line Width Roughness) during processing of said substrate, wherein said test structure comprises an array of features manufactured using artificial conditions providing amplified LER and/or LWR effect.
2. A test structure as in claim 1 , wherein said amplified LER and or LWR effect applied substantially along single axis of said array.
3. A test structure as in claim 1 , wherein said array of features being 2-D array.
4. A test structure as in claim 3 , wherein said amplified LER and/or LWR effect applied substantially along two mutually perpendicular axis of said array.
5. A test structure as in claim 1 , wherein said amplified LER and/or LWR effect caused by exposing using a mask having sub-resolution mask features.
6. A test structure as in claim 5 , wherein said sub-resolution mask features forming a 1-D array.
7. A test structure as in claim 5 , wherein said sub-resolution mask features forming a 2-D array.
8. A test structure as in claim 1 , being useful for an optical measurement.
9. A test structure as in claim 8 , being useful for a scatterometric measurement.
10. A test structure as in claim 8 , being useful for a spectral scatterometric measurement.
11. A test structure as in claim 1 further comprising an additional array of features characterized by substantially the same CD as the features manufactured with amplified LER and/or LWR effect.
12. An article comprising at least one test structure for monitoring a LER (Line Edge Roughness) and/or LWR effect (Line Width Roughness) during processing said substrate, wherein said test structure comprises an array of features manufactured using artificial conditions providing amplified LER and/or LWR effect.
13. An article as in claim 12 wherein said article is a semiconductor wafer.
14. An article as in claim 12 wherein said at least one test structure for monitoring a LER and/or LWR effect further comprising an additional array of features characterized by substantially the same CD as the features manufactured with amplified LER and/or LWR effect.