Semiconductor device including a first wiring having a bending portion and a via including the bending portion

1. A semiconductor device comprising:

a first wiring;

a second wiring which is arranged under the first wiring; and

a first via which is formed between the first wiring and the second wiring and electrically connects the first wiring and the second wiring, wherein:

in a planar view, the first wiring comprises:

a bending portion,

a first wiring region extending from the bending portion in a first direction, and

a second wiring region extending from the bending portion in a second direction orthogonal to the first direction,

in a planar view, the first via is arranged so as to include the bending portion, and

in a planar view, a length of the first via projecting from the bending portion in the first direction in the first wiring region is longer than a length of the first via projecting from the bending portion in the second direction in the second wiring region.

2. The semiconductor device of claim 1 , wherein

in a planar view, an end of the first via projecting in the first direction in the first wiring region has a circular arc shape expanding outward.

3. The semiconductor device of claim 1 , wherein

in a planar view, an end of the first via projecting in the second direction in the second wiring region has a circular arc shape expanding outward.

4. The semiconductor device of claim 1 , wherein

a width of the first wiring in a planar view is smaller than a depth of the first wiring.

5. The semiconductor device of claim 1 , wherein:

in a planar view, the bending portion has at least one side other than two sides from which the first wiring region and the second wiring region extend, respectively, and

in a planar view, the at least one side is flush with a corresponding one side of the via.

6. The semiconductor device of claim 1 , wherein:

in a planar view, the bending portion has a corner portion which is made by two sides of the bending portion other than two sides from which the first wiring region and the second wiring region extend, respectively, and

in a planar view, the corner portion is flush with a corresponding one corner of the via.

7. The semiconductor device of claim 1 , wherein:

in a planar view, the first wiring fully covers the via.

8. The semiconductor device of claim 1 , wherein:

in a planar view, the first wiring further comprises a third wiring region extending from the bending portion in the first direction and in an opposite side with respect to the bending portion, and

in a planar view, a length of the first via projecting from the bending portion in the first direction in the third wiring region is longer than the length of the first via projecting from the bending portion in the second direction in the second wiring region.

9. The semiconductor device of claim 1 , wherein:

in a planar view, the first wiring further comprises a fourth wiring region extending from the bending portion in the second direction and in an opposite side with respect to the bending portion, and

in a planar view, the length of the first via projecting from the bending portion in the first direction in the first wiring region is longer than a length of the first via projecting from the bending portion in the second direction in the fourth wiring region.

10. The semiconductor device of claim 8 , wherein:

in a planar view, the first wiring further comprises a fourth wiring region extending from the bending portion in the second direction and in an opposite side with respect to the bending portion, and

in a planar view, the length of the first via projecting from the bending portion in the first direction in the first wiring region is longer than a length of the first via projecting from the bending portion in the second direction in the fourth wiring region.

11. A semiconductor device comprising:

a first wiring disposed in a first layer;

a second wiring disposed in a second layer which is located under the first layer; and

a via connecting the first wiring and the second wiring, wherein:

the first wiring includes first and second regions arranged in directions orthogonal to each other, the first and second regions being connected at a bending portion,

the via overlaps the bending portion and a portion of the first and second regions of the first wiring, and

a first overlapping region in which the via overlaps the first region of the first wiring is greater than a second overlapping region in which the via overlaps the second region of the first wiring.

12. The semiconductor device of claim 11 , wherein

in a planar view, an end of the first overlapping region in the first direction in the first wiring has a circular arc shape expanding outward.

13. The semiconductor device of claim 11 , wherein

in a planar view, an end of the second overlapping region in the second direction in the second wiring region has a circular arc shape expanding outward.

14. The semiconductor device of claim 11 , wherein

a width of the first wiring in a planar view is smaller than a depth of the first wiring.

15. The semiconductor device of claim 11 , wherein:

in a planar view, the bending portion has at least one side other than two sides at which the first wiring region and the second wiring region are connected to the bending portion, respectively, and

in a planar view, the at least one side is flush with a corresponding one side of the via.

16. The semiconductor device of claim 11 , wherein:

in a planar view, the bending portion has a corner portion which is made by two sides of the bending portion other than two sides at which the first wiring region and the second wiring region are connected to the bending portion, respectively, and

in a planar view, the corner portion is flush with a corresponding one corner of the via.

17. The semiconductor device of claim 11 , wherein:

in a planar view, the first wiring fully covers the via.