Virtual substrates for epitaxial growth and methods of making the same
A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
1. A substrate, comprising:
a handle support; and
a single crystalline layer on the handle support, wherein the single crystalline layer is substantially elastically relaxed.
2. The substrate of claim 1 , wherein the single crystalline layer is completely elastically relaxed.
3. The substrate of claim 1 , wherein the single crystalline layer comprises a material selected from the group consisting of III-V semiconductor materials, II-VI semiconductor materials, IV-IV semiconductor materials, and ceramic semiconductor materials.
4. The substrate of claim 3 , wherein the single crystalline layer comprises a III-V semiconductor material.
5. The substrate of claim 4 , wherein the single crystalline layer comprises an alloy of In, Ga and As.
6. The substrate of claim 1 , wherein the handle support comprises Si.
7. The substrate of claim 1 , wherein the handle support comprises a SiO 2 /Si substrate.
8. A substrate, comprising:
a substantially planar handle support; and
a single crystalline layer on the handle support, wherein the single crystalline layer is substantially elastically relaxed.
9. The substrate of claim 8 , wherein the single crystalline layer is completely elastically relaxed.
10. The substrate of claim 1 , wherein the single crystalline layer is substantially defect-free.
11. The substrate of claim 8 , wherein the single crystalline layer is substantially defect-free.