Package for optical semiconductor device, optical semiconductor device using the package, and methods for producing same
View Patent ↗The present invention is a package for optical semiconductor devices, and an optical semiconductor device using the package, which can prevent discoloration of a plating layer formed on a lead frame even when a silicone resin is used as a sealing resin for an optical semiconductor device, and which enables high luminous efficiency for a long time. Specifically, in the package for semiconductor devices, a plating laminate 15 , wherein a pure Ag plating layer 4 , a thin reflective plating layer 6 serving as the uppermost layer for improving the light reflection ratio, and a resistant plating layer 5 serving as an intermediate layer therebetween and having chemical resistance against at least either metal chlorides or metal sulfides are laminated, is formed on at least the surface of a lead electrode. The reflective plating layer 4 is composed of a pure Ag thin film, and the resistant plating layer 5 is composed of a complete solid solution Au—Ag alloy plating layer.
1. An optical semiconductor device comprising a light emitting element, provided in electrical connection with a lead electrode, and sealing resin provided so as to seal the light emitting element and the lead electrode, wherein:
a plating laminate composed of a plurality of plating layers is formed on at least part of a surface of the lead electrode,
the plating laminate includes:
a pure Ag plating layer;
an uppermost layer that is a thin film reflective plating layer thinner than the pure Ag plating layer; and
an intermediate layer, between the pure Ag plating layer and the uppermost layer, that is a resistant plating layer composed of a complete solid solution Au—Ag alloy plating layer, the resistant plating layer having chemical resistance to at least one of metal chlorides and metal sulfides,
the lead electrode has a degree of reflection, with respect to emissions by the light emitting element, of 50% or greater at an emission wavelength of 400 nm, 80% or greater at an emission wavelength of 450 nm, and 85% or greater at an emission wavelength range of 500 nm to 700 nm, and
the reflective plating layer is a thin layer of pure Ag.
2. The optical semiconductor device of claim 1 , wherein the Au—Ag alloy plating includes Au as a primary component and includes Ag in a range of 27.0 wt % to 50.0 wt % inclusive.
3. The optical semiconductor device of claim 1 , wherein the resistant plating layer has a thickness between 0.05 μm and 0.3 μm inclusive.
4. The optical semiconductor device of claim 1 , wherein the reflective plating layer has a thickness between 0.003 μm and 0.010 μm inclusive.
5. The optical semiconductor device of claim 1 , wherein the pure Ag plating layer has a thickness between 1.6 μm and 8.0 μm inclusive.
6. The optical semiconductor device of claim 1 , wherein the pure Ag plating layer has a degree of brilliance of 1.2 or greater.
7. The optical semiconductor device of claim 1 , wherein the plating laminate is provided at, at least, part of a surface of an enclosure that is in contact with sealing resin.
8. The optical semiconductor device of claim 1 , wherein the sealing resin is a transparent resin that includes a metal chloride catalyst.
9. The optical semiconductor device of claim 8 , wherein the transparent resin is silicone resin.
10. The optical semiconductor device of claim 8 , wherein the metal chloride catalyst is platonic chloride.
11. The optical semiconductor device of claim 1 , wherein the plating laminate has a total thickness of approximately 2.657 μm.
12. The optical semiconductor device of claim 1 , wherein the sealing resin includes at least one of a metal chloride and a metal sulfide.