LED device with improved thermal performance

1. A packaged wafer, comprising:

a wafer having a plurality of through-holes therein;

a plurality of light-emitting diode (LED) devices installed in the plurality of through-holes, respectively; and

a plurality of non-equivalent area conductive carriers coupled to the plurality of LED devices;

wherein the plurality of non-equivalent area conductive carriers is coupled to the wafer in a manner so that the plurality of LED devices and respective portions of the plurality of non-equivalent area conductive carriers at least partially fill each of the through-holes.

2. The packaged wafer of claim 1 , wherein:

the wafer includes:

a substrate having one of: a silicon material, a ceramic material, a plastic material, and an organic material; and

a plurality of first and second conductive elements disposed on opposite sides of the substrate; and

the conductive carriers each include:

a core portion that is coupled to the respective LED device, the core portion being the portion of the conductive carrier partially filling the respective through-hole; and

a base portion that is coupled to the core portion and one of the first and second conductive elements.

3. The packaged wafer of claim 2 , wherein:

the through-holes each have a first lateral dimension;

the core portion has a second lateral dimension that is smaller than the first lateral dimension; and

the base portion has a third lateral dimension that is greater than the first lateral dimension.

4. The packaged wafer of claim 2 , wherein:

the through-holes each have a first portion in one part of the substrate and a second portion in a different part of the substrate;

the second portion of each of the through-holes is wider than the first portion of each of the through-holes;

each of the LED devices and the core portion of each of the conductive carriers are disposed within the first portion of each of the through-holes; and

the base portion of each of the conductive carriers is disposed within the second portion of each of the through-holes.

5. The packaged wafer of claim 2 , wherein the wafer further includes a dielectric material that surrounds portions of the substrate, the dielectric material being disposed between the first and second conductive elements.

6. The packaged wafer of claim 2 , wherein the base portion of each of the conductive carriers includes a structure that is selected from the group consisting of: a metal layer, a doped silicon layer, and a silicon layer being disposed between two dielectric layers, the two dielectric layers being disposed between two metal layers.

7. The packaged wafer of claim 2 , wherein:

the first conductive elements each include a wire-bonding pad;

the LED devices each include a contact pad that is wire-bonded to the wire-bonding pad; and

the base portion of each of the conductive carriers is coupled to one of the second conductive elements.

8. The packaged wafer of claim 7 , wherein the wafer includes one or more conductive through-silicon-vias (TSVs) that each vertically extend through the substrate, one end of each of the TSVs being coupled to a respective one of the wire-bonding pads.

9. The packaged wafer of claim 2 , wherein an isolation material is disposed in each of the through-holes and fills gaps between the respective LED device and the wafer, a portion of the isolation material forming a lens for the respective LED device.

10. A packaged semiconductor wafer, comprising:

a substrate having a plurality of through-holes therein;

a plurality of conductive structures having respective core components and respective base components, the respective core components each being inserted into a respective one of the through-holes, the respective base components each being coupled to respective portions of the substrate around the through-holes;

a plurality of light-emitting diode (LED) devices that are respectively located on the respective core components and inside the through-holes, the LED devices each being spaced apart from sidewalls of the respective through-hole; and

an insulating material formed over the substrate, a portion of the insulating material filling a space between the LED devices and sidewalls of the respective through-hole.

11. The packaged semiconductor wafer of claim 10 , wherein:

the through-holes each have a first portion and a second portion that has a greater size than the first portion;

the respective core components and the LED devices are located partially inside the respective first portions of the through-holes; and

the respective base components are located partially inside the respective second portions of the through-holes.

12. The packaged semiconductor wafer of claim 10 , wherein:

the substrate includes a non-metal material and is surrounded by a dielectric material;

the insulating material includes a polymer material;

the respective core components each include a metal material; and

the respective base components each include one of: a metal material, a doped silicon material, and interposing layers of silicon, dielectric, and metal.

13. The packaged semiconductor wafer of claim 10 , further including: a plurality of first and second metal elements formed on opposite sides of the substrate; wherein:

the first metal elements are each wire-bonded to a respective one of the LED devices; and

the second metal elements are each attached to a respective one of the base components.

14. A device, comprising:

a plurality of openings in a wafer;

a plurality of light-emitting diode (LED) devices coupled to a plurality of conductive carriers, respectively; and

wherein, each of the plurality of openings are at least partially filled with one or more of the plurality of the LED devices and a respective portion of each of the plurality of conductive carriers.

15. The device of claim 14 , wherein:

the plurality of openings are etched openings in a substrate, the substrate having one of: a silicon material, a ceramic material, a plastic material, and an organic material, the substrate having a plurality of first and second conductive elements disposed on opposite sides of the substrate;

the plurality of LED devices are coupled to a core portion of each of the conductive carriers, the core portion being the respective portion of each of the conductive carriers that partially fills each of the openings; and

the at least partially filled openings include: a base portion of each of the conductive carriers coupled to one of the respective first and second conductive elements.

16. The device of claim 15 , wherein:

the openings each have a first lateral dimension;

the core portion has a second lateral dimension that is smaller than the first lateral dimension; and

the base portion has a third lateral dimension that is greater than the first lateral dimension.

17. The device of claim 16 , wherein the base portion includes a structure that is selected from the group consisting of: a metal layer, a heavily doped silicon layer, and a silicon layer being disposed between two dielectric layers, the two dielectric layers being disposed between two metal layers.

18. The device of claim 15 , further including: a dielectric material surrounding portions of the substrate, the dielectric material being formed between the first and second conductive elements.