IP Library Granted Patent US 8,216,881
Granted Patent B2
US 8,216,881 · App. 12/947,031 · Granted Jul 10, 2012

Method for fabricating a semiconductor and semiconductor package

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,216,881
App. No.
12/947,031
Granted
Jul 10, 2012
Kind
B2
Abstract

A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.

Claims (15)

1. A method for fabricating a semiconductor chip module, comprising:

providing a first layer, a second layer, and a base layer, wherein the first layer is disposed on the base layer, and the second layer is disposed on the first layer;

applying a plurality of semiconductor chips above the second layer; and

separating the second layer with the applied semiconductor chips from the first layer.

2. The method of claim 1 , further comprising:

covering the semiconductor chips and the second layer at least in part with a material layer.

3. The method of claim 2 , wherein the covering comprises molding.

4. The method of claim 1 , comprising wherein the second layer is a dielectric layer.

5. The method of claim 4 , wherein the second layer comprises a dielectric material comprising an additive, which releases electrically conducting material upon irradiation.

6. The method of claim 5 , comprising wherein the base material of the second layer is out of the group or a combination of acrylate, epoxy-B-stage, PBO, polyimide or thermoplastic material.

7. The method of claim 4 , wherein the second layer comprises a dielectric material comprising an additive, which releases a catalytic starter upon irradiation.

8. The method of claim 1 , further comprising:

forming a plurality of electrical conductors extending through the second layer to connect to contact pads on surfaces of the semiconductor chips, respectively.

9. The method of claim 8 , further comprising:

fabricating a wiring layer onto the second layer, the wiring layer comprising electrically conductive contact areas connected to the electrical conductors.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061827/0686 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2022
From: INTEL DEUTSCHLAND GMBH
To: INTEL CORPORATION
Reel/Frame 061356/0001 →
CHANGE OF NAME Recorded Nov 6, 2015
From: INTEL MOBILE COMMUNICATIONS GMBH
To: INTEL DEUTSCHLAND GMBH
Reel/Frame 037057/0061 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2012
From: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
To: INTEL MOBILE COMMUNICATIONS GMBH
Reel/Frame 027556/0709 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2012
From: INFINEON TECHNOLOGIES AG
To: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
Reel/Frame 027548/0623 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2010
From: BEER, GOTTFRIED; ESCHER-POEPPEL, IRMGARD
To: INFINEON TECHNOLOGIES AG
Reel/Frame 025365/0638 →