Methods for forming planarized hermetic barrier layers and structures formed thereby
View Patent ↗Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a conductive material in an interconnect opening within an interlayer dielectric material that is disposed on a substrate, forming a low density dielectric material on a surface of the dielectric layer and on a surface of the conductive material, and forming a high density dielectric barrier layer on the low density dielectric layer.
1. A structure comprising:
a low density dielectric material disposed over patterned conductive material within a first low k ILD disposed on a substrate;
a high density dielectric barrier material disposed on the low density dielectric material, wherein the high density dielectric material comprises a thickness less than about ¼ of a thickness of the low density material; and
a second ILD disposed on the high density dielectric barrier material.
2. The structure of claim 1 wherein the high density dielectric barrier material comprises at least one of SiC:H, SiCN:H, SiOC:H, SiNx:H, SiC:H, SiBN, BN, and AIN.
3. The structure of claim 1 wherein the conductive material comprises at least one of a dopant surface interface layer, a hydride surface interface layer, and a metal cap.
4. The structure of claim 1 wherein the high density dielectric barrier material comprises a density greater than about 2.2 g/cm 3 and a k value greater than about 4.0.
5. The structure of claim 1 wherein the high density dielectric barrier material comprises a thickness of about 1 nm to about 6 nm.
6. The structure of claim 1 wherein the high density dielectric barrier layer disposed on the low density barrier layer comprises a dual layer dielectric barrier layer.
7. The structure of claim 6 further comprising wherein the dual layer dielectric barrier comprises an hermetic barrier layer.
8. The structure of claim 1 wherein the low density dielectric material planarizes the underlying conductive material an ILD layer.