IP Library Granted Patent US 8,445,177
Granted Patent B2
US 8,445,177 · App. 12/950,353 · Granted May 21, 2013

Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part

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Quick Facts
Patent No.
US 8,445,177
App. No.
12/950,353
Granted
May 21, 2013
Kind
B2
Abstract

A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.

Claims (29)

1. A photosensitive adhesive film comprising:

(A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH;

(B) a photo-polymerizable compound;

(C) a photopolymerization initiator; and

(D) a thermosetting resin,

wherein the photosensitive adhesive film is a photosensitive adhesive film obtainable by:

dissolving or distributing a photosensitive adhesive composition in an organic solvent to prepare a varnish;

forming a layer of the varnish on a substrate, to form a varnish layer; and

drying the varnish layer; and

wherein the photosensitive adhesive film has a property that, when a silicon chip is bonded to a glass substrate via the photosensitive adhesive film, the photosensitive adhesive film provides a shear adhesive strength of 5 MPa or more at 25° C.

2. The photosensitive adhesive film according to claim 1 , wherein said thermosetting resin is an epoxy resin.

3. The photosensitive adhesive film according to claim 1 , wherein said polyimide is a polyimide obtainable by reacting a tetracarboxylic acid dianhydride and a diamine, wherein said diamine includes an aromatic diamine expressed by the following general formulae (I) or (II):

4. The photosensitive adhesive film according to claim 3 , wherein said polyimide is a polyimide obtained by reacting said tetracarboxylic acid dianhydride and said diamine.

5. The photosensitive adhesive film according to claim 1 , wherein a residual volatile material therein is 10 mass % or less.

6. The photosensitive adhesive film according to claim 1 , wherein a thickness of said varnish layer is 1 to 10 μm.

7. The photosensitive adhesive film according to claim 1 , wherein said photosensitive adhesive composition includes said polyimide, said photo-polymerizable compound, said photopolymerization initiator and said thermosetting resin.

8. The photosensitive adhesive film according to claim 1 , wherein the photosensitive adhesive film has a further property that when the silicon chip is bonded to the glass substrate via the photosensitive adhesive film, the photosensitive adhesive film provides a shear adhesive strength of 0.5 MPa or more at 260° C.

9. An adhesive sheet comprising:

a substrate; and

the photosensitive adhesive film according to claim 1 provided on one surface of the substrate.

10. An adhesive pattern formed by forming an adhesive layer comprising the photosensitive adhesive film according to claim 1 on an adherend, exposing the adhesive layer to light, and developing the adhesive layer after exposure.

11. A semiconductor wafer with an adhesive layer, comprising:

a semiconductor wafer; and

an adhesive layer comprising the photosensitive adhesive film according to claim 1 provided on one surface of said semiconductor wafer.

12. A semiconductor device comprising a semiconductor chip bonded to an adherend using a photosensitive adhesive film according to claim 1 .

13. An electronic component comprising the semiconductor device according to claim 12 .

14. A method for producing a semiconductor device, comprising the steps of:

forming an adhesive pattern by forming an adhesive layer consisting of the photosensitive adhesive film according to claim 1 on an adherend, light-exposing the adhesive layer; and developing the adhesive layer after exposure; and

bonding another adherend to the adherend via the adhesive pattern.

Assignments (4)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
CHANGE OF ADDRESS OF ASSIGNEE Recorded Feb 27, 2013
From: HITACHI CHEMICAL COMPANY, LTD.
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 029891/0460 →