Method for manufacturing mask
View Patent ↗Openings are formed in first and second mask layers. Next, diameter of the opening in the second mask layer is enlarged so that the diameter of the opening in the second mask layer becomes larger by a length X than diameter of the opening in the first mask layer. Thereafter, mask material is formed into the opening in the second mask layer, to form a cavity with a diameter X within the opening in the second mask layer. There is formed a mask which includes the second mask layer and the mask material having therein opening including the cavity.
1. A method for manufacturing a mask, comprising:
forming a second mask layer and a first mask layer in this order on a first film;
patterning the first and second mask layers to form openings in the first and second mask layers;
enlarging diameters of the openings in the second mask layer so that the diameters of the openings in the second mask layer become larger than diameters of the openings in the first mask layer;
depositing mask material into the openings in the first and second mask layers so that cavities are formed within the openings in the second mask layer;
etching back the first mask layer and the mask material so that the second mask layer remains, to remove the first mask layer and to expose the cavities in the second mask layer; and
removing the mask material from bottom surfaces of the cavities in a thickness direction of the mask material until the first film is exposed, to form a mask which includes the second mask layer and the mask material and has the openings including the cavities on the first film.
2. A method for manufacturing a mask, comprising:
forming a second mask layer and a first mask layer in this order on a first film, the second and first mask layers including therein openings;
performing an isotropic etching of the second mask layer so that diameters of the openings in the second mask layer become larger than diameter of the openings in the first mask layer; and
removing the first mask layer so that the second mask layer remains and providing mask material on side walls of the openings in the second mask layer so that cavities are formed in the openings in the second mask layer, to form a mask which includes the second mask layer and the mask material and includes openings comprising therein the cavities.
3. The method for manufacturing a mask according to claim 1 ,
wherein diameters of the cavities are in a range of 25 to 50 nm.
4. The method for manufacturing a mask according to claim 1 ,
wherein the first mask layer is a silicon-containing organic film.
5. The method for manufacturing a mask according to claim 1 ,
wherein the second mask layer is an organic anti-reflection film.
6. The method for manufacturing a mask according to claim 1 ,
wherein in enlarging the diameters of the openings in the second mask layer, the second mask layer is dry etched using oxygen gas as etching gas.
7. The method for manufacturing a mask according to claim 2 ,
wherein diameters of the cavity are in a range of 25 to 50 nm.
8. The method for manufacturing a mask according to claim 2 ,
wherein the first mask layer is a silicon-containing organic film.
9. The method for manufacturing a mask according to claim 2 ,
wherein the second mask layer is an organic anti-reflection film.
10. The method for manufacturing a mask according to claim 2 ,
wherein in performing the isotropic etching of the second mask layer, the second mask layer is dry etched using oxygen gas as etching gas.