GRANULAR VARISTOR AND APPLICATIONS FOR USE THEREOF
Embodiments described include a non-polymeric voltage switchable dielectric (VSD) material comprising substantially of a grain structure formed from only a single compound, processes for making same, and applications for using such non-polymeric VSD materials.
1 . A non-polymeric voltage switchable dielectric (VSD) material comprising substantially of a grain structure formed from only a single compound.
2 . The non-polymeric VSD material of claim 1 , wherein the specific compound corresponds to one of zinc oxide, bismuth oxide, tungsten oxide, or cadmium telluride.
3 . A substrate device comprising:
a metal layer;
a layer of non-polymeric voltage switchable dielectric (VSD) material;
wherein the layer of non-polymeric VSD material is formed on the metal layer.
4 . The substrate device of claim 3 , wherein the non-polymeric VSD material is comprised substantially of a grain structure formed from only a single compound
5 . The substrate device of claim 4 , wherein the metal layer includes at least one of copper, silver, nickel, gold, or chrome.
6 . The substrate device of claim 4 , wherein the non-polymeric VSD material is comprised purely of the single compound.
7 . The substrate device of claim 4 , wherein the non-polymeric VSD material is formed from one of zinc oxide, bismuth oxide, tungsten oxide, or cadmium telluride.
8 . The substrate device of claim 3 , wherein the non-polymeric VSD material is formed as an embedded layer within the substrate device.
9 . A substrate device comprising:
one or more conductive layers;
a layer of non-polymeric voltage switchable dielectric (VSD) material;
wherein the layer of non-polymeric VSD material is formed on the metal layer; and
wherein the layer of non-polymeric VSD material is positioned to bridge a gap between one or more electrical elements of the one or more conductive layers and a grounding element.
10 . The substrate device of claim 9 , wherein the non-polymeric VSD material is positioned to horizontally bridge the gap between the one or more electrical elements and the grounding element.
11 . The substrate device of claim 10 , wherein the grounding element includes a via that extends vertically as part of a grounding path.
12 . The substrate device of claim 9 , wherein the non-polymeric VSD material is provided as an embedded layer within the substrate device.
13 . The substrate device of claim 9 , wherein the non-polymeric VSD material is positioned to vertically bridge the gap between the one or more electrical elements and the grounding element.
14 . The substrate device of claim 9 , wherein the non-polymeric VSD material is formed purely of one of zinc oxide, bismuth oxide, tungsten oxide, or cadmium telluride
15 . The substrate device of claim 9 , wherein the substrate device corresponds to a semiconductor package.
16 . The substrate device of claim 9 , wherein the substrate device is a wafer device.
17 . The substrate device of claim 16 , wherein the non-polymeric VSD material is positioned on a ceiling layer of the wafer device.
18 . A method for forming a non-polymeric VSDM material on a target, the method comprising:
applying an energy beam to a varistor material in an amorphic state, so as to crystallize and peel of an exterior layer on which the energy beam is applied;
aggregating grain structures of the varistor material that formed when the varistor material crystallized and peeled off on a target location.
19 . The method of claim 18 , wherein applying an energy beam includes directing a laser onto the material in the amorphic state.
20 . The method of claim 19 , further comprising spinning the material relative to the directed laser.
21 . The method of claim 18 , wherein the mass is comprised of one of zinc oxide, bismuth oxide, tungsten oxide, or cadmium telluride.
22 . The method of claim 18 , wherein the method is performed in a vacuum.
23 . A non-polymeric voltage switchable dielectric (VSD) material formed by a process that comprises:
applying an energy beam to a varistor material in an amorphic state, so as to crystallize and peel of an exterior layer on which the energy beam is applied;
aggregating grain structures of the varistor material that formed when the varistor material crystallized and peeled off on a target location.