SYSTEMS, METHODS AND PRODUCTS INCLUDING FEATURES OF LASER IRRADIATION AND/OR CLEAVING OF SILICON WITH OTHER SUBSTRATES OR LAYERS
The present innovations relate to optical/electronic structures, and, more particularly, to methods and products consistent with composite structures for optical/electronic applications, such as solar cells and displays, composed of a silicon-containing material bonded to a substrate and including laser treatment.
1 . A method of producing a composite structure composed of a silicon-containing material bonded to a substrate, the method comprising:
implanting ions into silicon-containing material to a depth;
engaging the silicon-containing piece into contact with the substrate; and
irradiating/treating the silicon-containing piece with a laser having a wavelength of between about 350 nm to about 1070 nm.
2 . The method of claim 1 wherein the substrate is a borosilicate/borofloat glass or a soda-lime glass.
3 . The method of claim 1 further comprising cleaving the silicon-containing material along a surface established at about the depth at which the ions are implanted.
4 . The method of claim 1 wherein the irradiation step is performed with a laser having a wavelength between about 500 nm and about 600 nm.
5 . The method of claim 1 wherein the irradiation step is performed with a laser having a wavelength of about 515 nm or about 532 nm.
6 . The method of claim 1 wherein the substrate includes a base portion composed of glass, plastic or metal.
7 . The method of claim 1 wherein the substrate comprises one or more layers including a film of SiN/SiO2/Si coated on a base portion.
8 . The method of claim 1 further comprising of a step of annealing at a temperature between about 200° C. to about 450° C.
9 . The method of claim 1 further comprising of a step of annealing at a temperature between about 200° C. to about 450° C. for a period of less than about 45 minutes.
10 . The method of claim 7 or claim 8 wherein the step of annealing is performed after a step of laser irradiation/treatment.
11 . (canceled)
12 . A method of producing a composite solar cell structure composed of a silicon-containing material bonded to a glass substrate, the method comprising:
engaging the silicon-containing piece into contact with the glass substrate; and
irradiating/treating the silicon-containing piece with a laser having a wavelength of between about 350 nm to about 1070 nm, such that complete bonding between the piece and the glass substrate is achieved without need for further anneal.
13 . (canceled)
14 . The method of claim 12 wherein the irradiation step is performed with a laser having a wavelength between about 500 nm and about 600 nm.
15 .- 16 . (canceled)
17 . A method of producing a composite structure composed of a silicon-containing material bonded to a substrate, the method comprising:
implanting ions into silicon-containing material to a depth;
holding the silicon-containing piece into contact with the substrate;
irradiating/treating the silicon-containing piece with a laser having a wavelength of between about 350 nm to about 1070 nm; and
cleaving the silicon-containing material along a surface established at about the depth at which the ions are implanted.
18 . (canceled)
19 . The method of claim 17 further comprising cleaving the silicon-containing material along a surface established at the depth at which the ions are implanted.
20 . The method of claim 17 wherein the irradiation step is performed with a laser having a wavelength between about 500 nm and about 600 nm.
21 .- 27 . (canceled)
28 . The method of claim 1 wherein the step of irradiation comprises:
a first pass of the laser at an energy density of between about 0.5 and about 3 J/cm2; and
a second pass of the laser at an energy density of between about 0.5 and about 3 J/cm2.
29 . (canceled)
30 . The method of claim 12 wherein the step of irradiation comprises:
a first pass of the laser at an energy density of between about 0.5 and about 1 J/cm2;
a second pass of the laser at an energy density of between about 1 and about 1.5 J/cm2; and
a third pass of the laser at an energy density of between about 1.5 and about 3 J/cm2.
31 . The method of claim 17 wherein the step of irradiation comprises:
a first pass of the laser at an energy density of between about 1.5 and about 3 J/cm2;
a second pass of the laser at an energy density of between about 1 and about 1.5 J/cm2; and
a third pass of the laser at an energy density of between about 0.5 and about 1 J/cm2.
32 . The method of claim 1 wherein the step of irradiation comprises:
a first pass of the laser, at a speed/rate of about 0.0001 to about 0.01 cm 2 /sec, at an energy density of between about 0.5 and about 1 J/cm2; and
a second pass of the laser, at a speed/rate of about 0.01 to about 10 cm 2 /sec at an energy of between about 1 and about 3 J/cm2.
33 . The method of claim 12 wherein the step of irradiation comprises:
a first pass of the laser, at a speed/rate of about 0.0001 to about 0.01 cm 2 /sec, at an energy density of between about 0.5 and about 1 J/cm2;
a second pass of the laser, at a speed/rate of about 0.01 to about 10 cm 2 /sec at an energy of between about 1 and about 2 J/cm2; and
a third pass of the laser, at a speed/rate of about 0.01 to about 10 cm 2 /sec at an energy of between about 2 and about 3 J/cm2
34 .- 38 . (canceled)