Strained silicon structure
View Patent ↗A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.
1. A strained silicon structure comprising:
a substrate having a top surface and having a low density region and a high density region;
a first transistor disposed on the top surface within the low density region, the first transistor comprising:
a first gate structure disposed on the top surface; and
a first source/drain region disposed in the substrate at one side of the first gate structure, wherein a first source/drain to gate distance is defined between the first source/drain region and the first gate structure, and the first source/drain region is stressed
wherein the first source/drain region comprise:
a first recess disposed in the substrate at one side of the substrate; and a first epitaxial layer filling the first recess; and
a second transistor disposed on the top surface within the high density region, the second transistor comprising:
a second gate structure disposed on the top surface; and
a second source/drain region disposed in the substrate at one side of the second gate structure, wherein a second source/drain to gate distance is defined between the second source/drain region and the second gate structure, the second source/drain region is stressed, and the first source/drain to gate distance is smaller than the second source/drain to gate distance.
2. The strained silicon structure of claim 1 , wherein the first recess has a first opening, and a first distance is the shortest distance between the first gate structure and the first opening.
3. The strained silicon structure of claim 2 , wherein the second source/drain region comprises:
a second recess disposed in the substrate at one side of the substrate; and
a second epitaxial layer filling the second recess.
4. The strained silicon structure of claim 3 , wherein the second recess has a second opening, and a second distance is the shortest distance between the second gate structure and the second opening.
5. The strained silicon structure of claim 4 , wherein the first distance is shorter than the second distance.
6. The strained silicon structure of claim 1 , wherein the cross-sectional profile of the first source/drain region comprises a diamond-like shape, an octagon, or a U shape.
7. The strained silicon structure of claim 1 , wherein the cross-sectional profile of the second source/drain region comprises a diamond-like shape, an octagon, or a U shape.
8. The strained silicon structure of claim 1 , wherein the first transistor comprises a logic device, a memory device or an input/output device.
9. The strained silicon structure of claim 1 , wherein the second transistor comprises a logic device, a memory device or an input/output device.
10. The strained silicon structure of claim 1 , further comprising:
a first channel disposed under the first gate structure; and
a second channel disposed under the second structure, wherein a strain in the first channel is greater than a strain in the second channel.
11. The strained silicon structure of claim 1 , wherein the first transistor and the second transistor have a same conductivity type.
12. The strained silicon structure of claim 1 , further comprising:
a first epitaxial layer disposed within the first source/drain region; and
a second epitaxial layer disposed within the second source/drain region,
wherein the first epitaxial layer and the second epitaxial have a same composition.