Low-cost passive optical waveguide using Si substrate
A passive optical waveguide is solely built on a Si substrate while still maintaining high optical quality. Two side-by-side diamond shaped cavities may be etched into the Si wafer and oxide grown on the inner walls of the cavities until the oxide meets at opposing inner vertices of the diamond shaped cavities. An optical waveguide is formed by the inverted, generally triangular cross-sectional, portion of silicon remaining between the top surface of the wafer and the opposing inner vertices.
1. An apparatus, comprising:
a silicon wafer having a top surface, a cross-section of the silicon wafer comprising:
two generally diamond shaped trenches;
an oxide layer in the two generally diamond shaped trenches, the oxide layer converging at inner vertices of the diamond shaped trenches;
a waveguide comprising an inverted generally triangular section of silicon between the top surface of the silicon wafer and the inner vertices of the diamond shaped trenches.
2. The apparatus as recited in claim 1 wherein the top surface of the silicon wafer comprises a (100) crystal orientation.
3. The apparatus as recited in claim 1 wherein inner walls of the diamond shaped trenches comprise a (111) crystal orientation.
4. The apparatus as recited in claim 1 wherein the inner walls of the diamond shaped trenches comprise a ˜54.7° angle with respect to normal.
5. The apparatus as recited in claim 1 further comprising an optical device on the top surface over the waveguide.
6. The apparatus as recited in claim 5 wherein the optical device is a laser.
7. The apparatus as recited in claim 5 wherein the optical device is a photodiode.
8. The apparatus as recited in claim 5 wherein the optical device is an electroabsorption modulator.
9. A system, comprising:
a silicon wafer having a top surface, a cross-section of the silicon wafer comprising:
two generally diamond shaped trenches;
an oxide layer in the two generally diamond shaped trenches, the oxide layer converging at inner vertices of the diamond shaped trenches;
a waveguide comprising an inverted generally triangular section of silicon between the top surface of the silicon wafer and the inner vertices of the diamond shaped trenches; and
an optical or optoelectronic device over the waveguide.
10. The system as recited in claim 9 wherein the device comprises a laser.
11. The system as recited in claim 9 wherein the device comprises a photodetector.
12. The system as recited in claim 9 wherein the device comprises an electroabsorption modulator.