Semiconductor device and structure
View Patent ↗A semiconductor device including: a first mono-crystal layer and a second mono-crystal layer and at least one conductive layer in-between; where the at least one conductive layer includes a first conductive layer overlaying a second conductive layer overlying a third conductive layer, and where the second conductive layer having a predetermined second layer current carrying capacity greater than the current carrying capacity of the first conductive layer, and the second conductive layer current carrying capacity being greater than the current carrying capacity of the third conductive layer.
1. A semiconductor device comprising:
a first mono-crystal layer and a second mono-crystal layer and at least one conductive layer in-between; wherein
said at least one conductive layer comprises a first conductive layer overlaying a second conductive layer overlying a third conductive layer, and wherein
said second conductive layer having a
predetermined second layer current carrying capacity greater than the current carrying capacity of said first conductive layer, and said second conductive layer current carrying capacity being greater than the current carrying capacity of said third conductive layer.
2. A device according to claim 1 wherein said at least one conductive layer comprises metal.
3. A device according to claim 1 wherein said at least one conductive layer comprises copper or aluminum.
4. A device according to claim 1 wherein said predetermined second layer current carrying capacity comprises higher layer thickness.
5. A device according to claim 1 wherein said predetermined second layer current carrying capacity comprises larger metal line width.
6. A device according to claim 1 wherein said mono-crystal comprises silicon.
7. A device according to claim 1 wherein said first mono-crystal and said second mono-crystal comprise two different crystalline materials.
8. A semiconductor device comprising:
a first mono-crystal layer and a second mono-crystal layer and at least one conductive layer in-between; wherein
said at least one conductive layer comprises a first conductive layer overlaying a second conductive layer overlying a third conductive layer; and wherein
said second conductive layer has a greater layer thickness than said first conductive layer, and said second conductive layer has a greater layer thickness than said third conductive layer.
9. A device according to claim 8 wherein said at least one conductive layer comprises metal.
10. A device according to claim 8 wherein said at least one conductive layer comprises copper or aluminum.
11. A device according to claim 8 wherein said greater layer thickness comprises larger metal line width.
12. A device according to claim 8 wherein said greater layer thickness comprises higher current carrying capability.
13. A device according to claim 8 wherein said mono-crystal comprises silicon.
14. A device according to claim 8 wherein said first mono-crystal and said second mono-crystal comprise two different crystalline materials.
15. A semiconductor device comprising:
a first mono-crystal layer and a second mono-crystal layer and at least one conductive layer in-between; wherein
said at least one conductive layer comprises a first conductive layer overlaying a second conductive layer overlying a third conductive layer, and wherein
said second conductive layer having a predetermined second layer current carrying capacity greater than the current carrying capacity of said first conductive layer, and said second conductive layer current carrying capacity being greater than the current carrying capacity of said third conductive layer,
and wherein
said first mono-crystal layer comprises first transistors, and said second mono-crystal layer comprises second transistors, and wherein
said second transistors are aligned to said first transistors.
16. A semiconductor device according to claim 15 wherein said first mono-crystal and said second mono-crystal comprise two different crystalline materials.
17. A semiconductor device according to claim 15 wherein said first mono-crystal comprises silicon.
18. A semiconductor device according to claim 15 wherein
said first mono-crystal comprises silicon in first orientation, and wherein
said second mono-crystal comprises silicon with a different orientation than said first orientation.
19. A device according to claim 15 wherein said at least one conductive layer comprises copper or aluminum.
20. A device according to claim 15 wherein said predetermined second layer current carrying capacity comprises a higher layer thickness.