Combinatorial plasma enhanced deposition and etch techniques
According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
1. An apparatus comprising:
a pedestal, the pedestal includes at least two electrodes embedded in the pedestal,
a showerhead, the showerhead located above the pedestal;
a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the pedestal; and
a power source operably connected to the showerhead and each of the at least two electrodes, wherein the power source is configured to cause a voltage difference between said showerhead and one of the at least two electrodes for creation of plasma after introduction of plasma gas into the processing region, the plasma being substantially contained in an area which corresponds with the one electrode of said at least two electrodes.
2. The apparatus of claim 1 , wherein said plasma is substantially isolated from a second area which corresponds with another electrode of said at least two electrodes.
3. The apparatus of claim 1 , wherein the at least two electrodes are electrically connected and disconnected to the power source.
4. The apparatus of claim 3 , further comprising a controller to select the one of the at least two electrodes to connect to the power source.
5. The apparatus of claim 4 , further comprising at least one precursor source connected to the showerhead.
6. The apparatus of claim 5 , wherein the showerhead is configured to deliver precursor from said at least one precursor source.
7. The apparatus of claim 6 , wherein said showerhead is configured to deliver precursor from said at least one precursor source to a substrate placed on said pedestal for at least one of plasma-enhanced chemical vapor deposition or plasma-enhanced atomic layer deposition.
8. The apparatus of claim 6 , wherein said showerhead is configured to deliver precursor from said at least one precursor source to a substrate place on said pedestal for plasma etch of said substrate.
9. An apparatus comprising:
a pedestal, the pedestal includes a first electrode and a second electrode embedded in the pedestal, wherein the first electrode is located in a first region of the pedestal and the second electrode is located in a second region of the pedestal;
a showerhead, the showerhead located above the pedestal and configured to provide a plasma gas into a processing region between the pedestal and the showerhead;
a power source operably connected to the showerhead, the first electrode and the second electrode, wherein the power source is selectively connected to one of the first electrode or the second electrode to cause a voltage difference between said showerhead and the one of the first electrode or the second electrode for creation of plasma after introduction of plasma gas into the processing region, the plasma being substantially contained in one of the first region or the second region of the pedestal.
10. The apparatus of claim 9 , wherein the first electrode and the second electrode are electrically connected and disconnected to the power source.
11. The apparatus of claim 10 , further comprising a controller to select the one of the first electrode or the second electrode to connect to the power source.
12. The apparatus of claim 9 , further comprising at least one precursor source connected to the showerhead.
13. The apparatus of claim 12 , wherein the showerhead is configured to deliver precursor from said at least one precursor source.
14. The apparatus of claim 13 , wherein said showerhead is configured to deliver precursor from said at least one precursor source to a substrate placed on said pedestal for at least one of plasma-enhanced chemical vapor deposition or plasma-enhanced atomic layer deposition.
15. The apparatus of claim 13 , wherein said showerhead is configured to deliver precursor from said at least one precursor source to a substrate placed on said pedestal for plasma etch of said substrate.