Mid-infrared tunable metamaterials
A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.
1. A metamaterial tunable within an operating frequency range, comprising:
a doped indium antimonide substrate having a large dependence of dielectric function on the carrier concentration and a semiconductor plasma resonance lying below the operating frequency range;
an array of resonators on the doped indium antimonide substrate;
a gate dielectric layer between the resonator array and the doped indium antimonide substrate; and
an electrical circuit adapted to apply a bias voltage between the doped indium antimonide substrate and the resonator array for modulating the carrier concentration of the indium antimonide substrate and tuning the resonance of the resonator array over the operating frequency range;
wherein the resonator array is tunable over an operating frequency range of 100 THz to 15 THz (wavelength range of 3 20 μm).
2. The metamaterial of claim 1 , wherein the indium antimonide substrate is doped n-type.
3. The metamaterial of claim 2 , wherein the doping concentration is 1×10 16 cm −3 to 5×10 18 cm −3 .
4. The metamaterial of claim 1 , wherein the doped indium antimonide substrate comprises a doped layer on a semi-insulating substrate.
5. The metamaterial of claim 1 , wherein the resonator array comprises a ring-like structure with one or multiple splits or a wire-like structure in a connected arrangement.
6. The metamaterial of claim 5 , wherein the resonator array comprises a split-ring resonator, a cut-wire pair, or a fishnet-like structure.
7. The metamaterial of claim 1 , wherein the gate dielectric layer comprises HfO 2 .
8. The metamaterial of claim 1 , wherein the gate dielectric layer comprises SiO 2 and wherein the resonator array is tunable over an operating frequency range of 100 THz to 43 THz (wavelength range of 3-7 μm).
9. The metamaterial of claim 1 , wherein the resonator array is tunable over an operating frequency range of 37.5 THz to 25 THz (wavelength range of 8-12 μm).