IP Library Granted Patent US 8,330,263
Granted Patent B2
US 8,330,263 · App. 12/965,672 · Granted Dec 11, 2012

Semiconductor device

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Quick Facts
Patent No.
US 8,330,263
App. No.
12/965,672
Granted
Dec 11, 2012
Kind
B2
Abstract

Various embodiments of the present invention include a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.

Claims (34)

1. A semiconductor device comprising:

a first semiconductor chip disposed on a first surface of a first substrate, the first substrate comprises a second surface opposing the first surface;

a first resin sealing the first semiconductor chip;

a built-in semiconductor device comprising:

a second substrate;

a second semiconductor chip disposed on the second substrate; and

a second resin sealing the second semiconductor chip, the second resin of the built-in semiconductor device disposed on the first resin; and

a third resin sealing the first resin and the built-in semiconductor device and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate.

2. The semiconductor devices of claim 1 , further comprising a solder bump on the second surface of the first substrate.

3. The semiconductor device of claim 1 , wherein the first semiconductor chip is disposed on the first surface of the first substrate with a die attach material.

4. The semiconductor device of claim 3 , wherein the second semiconductor chip is disposed on the second substrate with a die attach material.

5. The semiconductor device of claim 4 , wherein the second resin of the built-in semiconductor device is disposed on the first resin with an adhesive.

6. The semiconductor device of claim 1 , wherein the second semiconductor chip is disposed on the second substrate with a die attach material.

7. The semiconductor device of claim 1 , wherein the second resin of the built-in semiconductor device is disposed on the first resin with an adhesive.

8. The semiconductor device of claim 1 , wherein the second semiconductor chip is electrically coupled to the second substrate by a wire.

9. The semiconductor device of claim 1 , wherein the second semiconductor chip is located between the first and second substrates.

10. The semiconductor device of claim 1 , wherein the first substrate is reverse wire bonded to the built-in semiconductor device.

11. A semiconductor device comprising:

a first semiconductor chip attached on a first surface of a first substrate, the first substrate comprises a second surface opposing the first surface;

a first resin sealing the first semiconductor chip;

a built-in semiconductor device comprising:

a second substrate;

a second semiconductor chip attached on the second substrate; and

a second resin sealing the second semiconductor chip, the second resin of the built-in semiconductor device attached on the first resin; and

a third resin sealing the first resin and the built-in semiconductor device and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate.

12. The semiconductor device of claim 11 , wherein the second semiconductor chip is located between the first and second substrates.

13. The semiconductor device of claim 11 , wherein the second semiconductor chip is electrically coupled to the second substrate by a first wire.

14. The semiconductor device of claim 13 , wherein the second substrate is electrically coupled to the first substrate by a second wire.

15. The semiconductor device of claim 13 , wherein the first substrate is reverse wire bonded to the built-in semiconductor device.

16. The semiconductor device of claim 11 , wherein the built-in semiconductor device is electrically coupled to the first substrate by a wire.

17. The semiconductor device of claim 11 , wherein the first substrate is reverse wire bonded to the built-in semiconductor device.

18. The semiconductor device of claim 11 , wherein the first semiconductor chip is attached on the first surface of the first substrate with a die attach material.

19. The semiconductor device of claim 11 , wherein the second semiconductor chip is attached on the second substrate with a die attach material.

20. The semiconductor device of claim 11 , wherein the second resin of the built-in semiconductor device is attached on the first resin with an adhesive.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 23, 2015
From: SPANSION LLC
To: VALLEY DEVICE MANAGEMENT
Reel/Frame 036011/0839 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 7, 2013
From: ONODERA, MASANORI; MEGURO, KOUICHI; TANAKA, JUNJI
To: SPANSION LLC
Reel/Frame 030963/0208 →
RELEASE OF LIEN ON PATENT Recorded Aug 5, 2013
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 030945/0505 →