Thermal matching in semiconductor devices using heat distribution structures
View Patent ↗Embodiments described herein provide a chip, comprising a first device on a substrate and a second device on the substrate. The chip further comprises a heat distribution structure in thermal proximity to the first device and the second device, wherein the heat distribution structure is thermally isolated and reduces a thermal gradient between the first device and the second device.
1. A method of fabricating a chip, comprising:
forming a heat distribution structure over a first substrate;
forming a first element and a second element over the heat distribution structure; and
forming a third element not over the heat distribution structure;
wherein at least a portion of the heat distribution structure is under the entire first element and the entire second element and provides thermal distribution approximately thermally matching the first element and the second element, and is thermally isolated within the chip from the third element.
2. The method of claim 1 , wherein forming a heat distribution structure comprises forming the heat distribution structure within the first substrate, wherein the heat distribution structure has a larger thermal conductivity than the first substrate.
3. The method of claim 1 , wherein the heat distribution structure approximately thermally matches the first element and the second element.
4. The method of claim 1 , further comprising:
depositing a first layer over the first substrate, wherein the first layer comprises a material not conducive to the growth of a material of the heat distribution structure; and
patterning the first layer to expose a portion of the first substrate to form a selected shape of the heat distribution structure, wherein the first substrate comprises a material conducive to growth of the material of the heat distribution structure;
wherein forming the heat distribution structure comprises growing the heat distribution structure over the exposed portion of the first substrate.
5. The method of claim 4 , wherein the heat distribution structure comprises diamond grown on the exposed portion of the first substrate.
6. The method of claim 1 , further comprising:
forming a bonding layer over the heat distribution structure; and
bonding a second substrate to the bonding layer.
7. The method of claim 1 , further comprising:
depositing a first layer over the first substrate, wherein the first layer is conducive to the growth of diamond;
depositing a second layer over the first layer, wherein the second layer is not conducive to the growth of diamond;
patterning the second layer to expose a portion of the first layer;
wherein forming the heat distribution structure further comprises growing diamond over the exposed portion of the first layer.
8. The method of claim 1 , wherein forming the heat distribution structure further comprises forming the heat distribution structure within the first substrate.
9. The method of claim 1 , further comprising:
forming a metallization layer over the heat distribution structure, wherein the heat distribution structure is an over layer formed over at least the first substrate and is not located within the substrate.
10. The method of claim 1 , further comprising:
patterning the heat distribution structure such that it provides thermal matching for a plurality of fingers of the first element, wherein the first element is a multi-fingered element.