Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film.
1. A semiconductor device comprising:
a semiconductor substrate;
an electrode pad disposed on the semiconductor substrate;
a first insulating layer disposed on the electrode pad and the semiconductor substrate; the first insulating layer having a first opening directly over the electrode pad;
first wiring disposed on the first insulating layer, the first wiring being directly coupled to the electrode pad through a conductor via formed in the first opening;
a second wiring disposed on the first insulating layer, the second wiring is disposed perpendicularly to the first wiring;
a second insulating layer disposed on the first wiring, the second wiring and the first insulating layer, the second insulating layer having a second opening overlying a portion of the first wiring;
a metal film disposed on the first wiring in the second opening and on a part of the second insulating layer; and
a solder bump overlying the metal film,
wherein the second wire passes through under the metal film.
2. The semiconductor device according to claim 1 ,
wherein the second wiring has a center line average surface roughness of 100 nm or more in at least a portion contacting the second insulating layer.
3. The semiconductor device according to claim 1 , wherein the metal film includes a Ni layer.
4. The semiconductor device according to claim 1 , wherein the metal film includes a Cu layer having a thickness of 1 μm or more and a Ni layer.
5. A semiconductor device comprising:
a semiconductor substrate;
an electrode pad disposed on the semiconductor substrate;
a first insulating layer disposed on the electrode pad and the semiconductor substrate, the first insulating layer having a first opening directly over the electrode pad;
a first wiring disposed on the first insulating layer, the first wiring being directly coupled to the electrode pad through a conductor via formed in the first opening;
a second wiring disposed on the first insulating layer, the second wiring is disposed perpendicularly to the first wiring;
a second insulating layer disposed on the first wiring, the second wiring and the first insulating layer, the second insulating layer having a second opening overlying portion of the first wiring; and
a metal layer disposed on the first wiring in the second opening and on a part of the second insulating layer,
wherein the metal layer overhangs the second wiring.
6. The semiconductor device according to claim 5 ,
wherein the second wiring has a center line average surface roughness of 100 nm or more in at least a portion contacting the second insulating layer.
7. The semiconductor device according to claim 5 , wherein the second insulating layer includes a phenol resin.
8. The semiconductor device according to claim 7 , wherein the second insulating layer includes a rubber material.
9. The semiconductor device according to claim 5 , wherein the second insulating layer on the plurality of wirings has a thickness of 3 μm or more.