IP Library Granted Patent US 8,349,627
Granted Patent B2
US 8,349,627 · App. 12/976,977 · Granted Jan 8, 2013

Method for fabricating a light emitting diode package structure

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Quick Facts
Patent No.
US 8,349,627
App. No.
12/976,977
Granted
Jan 8, 2013
Kind
B2
Abstract

The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.

Claims (45)

1. A method for fabricating a light emitting diode (LED) package structure, comprising:

providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess; and

disposing an adhesion layer and a LED chip on a bottom of the recess,

wherein the adhesion layer is bonded between the carrier and the LED chip, a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap exists between a sidewall of the LED chip and an inner sidewall of the recess, and a portion of the adhesive layer is disposed in the gap.

2. The method as claimed in claim 1 , further comprising forming an optical material layer at least partially on an inner wall of the recess before disposing the adhesion layer and the LED chip on the bottom of the recess.

3. The method as claimed in claim 2 , wherein the optical material layer is optically reflective.

4. The method as claimed in claim 2 , wherein the optical material layer is optically absorptive.

5. The method as claimed in claim 1 , further comprising forming a fluorescent material layer in the recess.

6. The method as claimed in claim 1 , further comprising forming a second protrusion on the first protrusion, wherein the second protrusion having an opening connecting the recess.

7. The method as claimed in claim 6 , further comprising forming a optical material layer at least partially on an inner wall of the recess or the opening before disposing the adhesion layer and the LED chip on the bottom of the recess.

8. The method as claimed in claim 7 , wherein the optical material layer is optically reflective.

9. The method as claimed in claim 7 , wherein the optical material layer is optically absorptive.

10. The method as claimed in claim 6 , further comprising forming a transparent material layer in the recess.

11. The method as claimed in claim 10 , further comprising forming a fluorescent material layer in the opening.

12. The method as claimed in claim 1 , further comprising forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.

13. The method as claimed in claim 12 , further comprising forming a second protrusion on the first protrusion, wherein the second protrusion having an opening connecting the recess.

14. The method as claimed in claim 1 , where the substrate and the first protrusion are integrally formed.

15. A method for fabricating a light emitting diode (LED) package structure, comprising:

providing a carrier having a substrate, a first protrusion and a second protrusion,

wherein the first protrusion disposed on the substrate has a recess and the second protrusion disposed on the first protrusion has an opening connecting the recess; and

disposing an adhesion layer and a LED chip on a bottom of the recess,

wherein the adhesion layer is bonded between the carrier and the LED chip, a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap exists between a sidewall of the LED chip and an inner sidewall of the recess, and a portion of the adhesive layer is disposed in the gap.

16. The method as claimed in claim 15 , forming a transparent material layer in the recess.

17. The method as claimed in claim 16 , further comprising forming a fluorescent material layer in the opening.

18. The method as claimed in claim 15 , further comprising forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.

19. The method as claimed in claim 15 , where the substrate, the first protrusion and the second protrusion are integrally formed.

20. The method as claimed in claim 15 , further comprising forming a fluorescent material layer in the recess and the opening.

21. A method for fabricating a light emitting diode (LED) package structure, comprising:

providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess;

forming an optical material layer at least partially on an inner wall of the recess, wherein the optical material layer is optically absorptive; and

disposing an adhesion layer and a LED chip on a bottom of the recess,

wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.

22. A method for fabricating a light emitting diode (LED) package structure, comprising:

providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess;

disposing an adhesion layer and a LED chip on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess;

forming a second protrusion on the first protrusion, wherein the second protrusion having an opening connecting the recess; and

forming an optical material layer at least partially on an inner wall of the recess or the opening before disposing the adhesion layer and the LED chip on the bottom of the recess., wherein the optical material layer is optically absorptive.

23. A method for fabricating a light emitting diode (LED) package structure, comprising:

providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess;

disposing an adhesion layer and a LED chip on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess; and

forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.

24. A method for fabricating a light emitting diode (LED) package structure, comprising:

providing a carrier having a substrate, a first protrusion and a second protrusion, wherein the first protrusion disposed on the substrate has a recess and the second protrusion disposed on the first protrusion has an opening connecting the recess;

disposing an adhesion layer and a LED chip on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess; and

forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.

Assignments (2)
CHANGE OF NAME Recorded Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2020
From: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
To: EPISTAR CORPORATION
Reel/Frame 051924/0047 →