IP Library Granted Patent US 8,981,624
Granted Patent B2
US 8,981,624 · App. 12/978,762 · Granted Mar 17, 2015

Temperature control of micromachined transducers

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Quick Facts
Patent No.
US 8,981,624
App. No.
12/978,762
Granted
Mar 17, 2015
Kind
B2
Abstract

A micromachined structure, comprises a substrate and a cavity in the substrate. The micromachined structure comprises a membrane layer disposed over the substrate and spanning the cavity.

Claims (13)

1. A method, comprising:

providing a substrate comprising a surface and an opposing surface, the substrate having a first coefficient of thermal expansion;

forming a cavity in the substrate, the cavity comprising air;

forming a membrane layer over the surface and substantially spanning the cavity, the membrane layer having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion is substantially identical to the second coefficient of thermal expansion; and

forming an annular resonator over the membrane layer, the annular resonator comprising a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode.

2. A method as claimed in claim 1 , further comprising forming an opening through the opposing surface and in tandem with the cavity.

3. A method as claimed in claim 2 , wherein the cavity comprises a first width and the opening comprises a second width.

4. A method as claimed in claim 2 , wherein the forming the opening comprises a deep reactive ion etching method.

5. A method as claimed in claim 1 , further comprising forming a vent extending into the cavity and out of the surface of the substrate.

6. A method as claimed in claim 3 , wherein the first width is less than the second width.

7. A method as Claimed in claim 1 , wherein the membrane layer comprises. borosilicate glass.

8. A method as claimed in claim 1 , wherein the membrane layer comprises one of polysilicon (poly-Si), or silicon nitride (Si3N4), or silicon carbide (SiC).

9. A method as claimed in claim 1 , wherein the membrane layer does not comprises an opening in its geometric center.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 047422 FRAME: 0464. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 6, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 048883/0702 →
MERGER Recorded Oct 5, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047422/0464 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0471 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2010
From: MARTIN, DAVID; LEE, DONALD; CHOY, JOHN; PHILLIBER, JOEL; BUCCAFUSCA, OSVALDO
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 025537/0760 →