IP Library › Granted Patent US 8,158,491
Granted Patent B2
US 8,158,491 · App. 12/979,052 · Granted Apr 17, 2012

IC card and booking-account system using the IC card

Assignee: Semiconductor Energy Laboratory Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,158,491
App. No.
12/979,052
Granted
Apr 17, 2012
Kind
B2
Abstract

It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

Claims (43)

1. A method for manufacturing an article comprising:

forming a metal film over a substrate;

forming a metal oxide film by oxidizing a surface of the metal film;

selectively removing the metal film formed in an edge portion of the substrate;

forming a base film over the metal oxide film;

forming a semiconductor element over the base film; and

separating the semiconductor element and the base film from the substrate by physical means.

2. The method for manufacturing the article according to claim 1 , further comprising forming an insulating film on the substrate.

3. The method for manufacturing the article according to claim 1 , wherein the metal film includes tungsten.

4. The method for manufacturing the article according to claim 1 , wherein the semiconductor element comprises a thin film transistor.

5. The method for manufacturing the article according to claim 1 , wherein the semiconductor element comprises a memory element.

6. The method for manufacturing the article according to claim 1 , wherein the article is a card having a thickness of from 0.05 mm to 1 mm.

7. The method for manufacturing the article according to claim 1 , wherein the article further comprises an antenna.

8. A method for manufacturing an article comprising:

forming a metal film over a substrate;

forming a metal oxide film by oxidizing a surface of the metal film;

selectively removing the metal film formed in an edge portion of the substrate;

forming a base film over the metal oxide film;

forming a semiconductor element over the base film;

forming a pixel electrode electrically connected to the semiconductor element; and

separating the pixel electrode, the semiconductor element and the base film from the substrate by physical means.

9. The method for manufacturing the article according to claim 8 , further comprising forming an insulating film on the substrate.

10. The method for manufacturing the article according to claim 8 , wherein the metal film includes tungsten.

11. The method for manufacturing the article according to claim 8 , wherein the semiconductor element comprises a thin film transistor.

12. The method for manufacturing the article according to claim 8 , wherein the article is a card having a thickness of from 0.05 mm to 1 mm.

13. The method for manufacturing the article according to claim 8 , wherein the article further comprises an antenna.

14. The method for manufacturing the article according to claim 8 , wherein the article is a display device.

15. The method for manufacturing the article according to claim 14 , wherein the display device is a liquid crystal display device.

16. A method for manufacturing an article comprising:

forming a metal film over a substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

selectively removing the metal film formed in an edge portion of the substrate;

forming a base film over the metal oxide film;

forming a semiconductor element over the base film;

forming a pixel electrode electrically connected to the semiconductor element; and

separating the pixel electrode, the semiconductor element and the base film from the substrate by physical means.

17. The method for manufacturing the article according to claim 16 , further comprising forming an insulating film on the substrate.

18. The method for manufacturing the article according to claim 16 , wherein the metal film includes tungsten.

19. The method for manufacturing the article according to claim 16 , wherein the semiconductor element comprises a thin film transistor.

20. The method for manufacturing the article according to claim 16 , wherein the article is a card having a thickness of from 0.05 mm to 1 mm.

21. The method for manufacturing the article according to claim 16 , wherein the article further comprises an antenna.

22. The method for manufacturing the article according to claim 16 , wherein the article is a display device.

23. The method for manufacturing the article according to claim 22 , wherein the display device is a liquid crystal display device.

Priority Claims (1)
JP 2002-378803 · Dec 27, 2002 · national
Continuity (3)
Continuation 12652910 · Jan 6, 2010
Continuation 10733260 · Dec 12, 2003
Related Publication 20110092025A1 · Apr 21, 2011