Thermo programmable resistor based ROM
An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has an adjustable resistor and a heating element. A dielectric material separates the heating element from the adjustable resistor. The heating element alters the resistance of the resistor by applying heat thereto. The magnitude of the resistance of the adjustable resistor represents the value of data stored in the memory cell.
1. An integrated circuit comprising:
a semiconductor substrate;
a first dielectric layer overlying the substrate;
an adjustable resistor overlying the first dielectric layer, a resistance of the adjustable resistor being representative of a value of digital data stored in the adjustable resistor;
a heating element adjacent the adjustable resistor and writing digital data to the adjustable resistor;
a second dielectric layer between the adjustable resistor and the heating element;
a bit line in ohmic electrical connection with both the adjustable resistor and the heating element and providing the value of the digital data during a data read cycle of the adjustable resistor;
a word line in ohmic electrical connection with the adjustable resistor; and
a heater line in ohmic electrical connection with the heating element, the heater line being different from the word line and the bit line.
2. The integrated circuit of claim 1 wherein the heating element dissipates heat through the second dielectric layer to write digital data to the adjustable resistor.
3. A memory cell comprising:
a thin film adjustable resistor;
a thin film heating element adjacent the thin film adjustable resistor;
a dielectric layer separating the thin film adjustable resistor from the thin film heating element, the thin film heating element writing digital data to the thin film adjustable resistor by dissipating heat through the dielectric layer to the thin film adjustable resistor;
a bit line in ohmic electric connection with both the thin film adjustable resistor and the thin film heating element and providing a value of the digital data during a read cycle of the memory cell;
a word line in ohmic electrical connection with the thin film adjustable resistor; and
a heater line in ohmic electrical connection with the thin film heating element, the heater line being different from the word line and the bit line.
4. The memory cell of claim 3 wherein the thin film adjustable resistor is chromium silicon.
5. A device comprising:
a semiconductor substrate;
a control circuit in the semiconductor substrate;
a first dielectric layer above the semiconductor substrate; and
a first array of memory cells above the first dielectric layer, each memory cell of the first array respectively including:
an adjustable resistor; and
a heating element separated from the adjustable resistor by a second dielectric layer, the heating element writing digital data to the adjustable resistor by heat transfer; and
a plurality of bit lines, each in ohmic electrical connection with both an adjustable resistor and a heating element of a respective memory cell;
a plurality of word lines, each in ohmic electrical connection with the adjustable resistor of one of the memory cells; and
a plurality of heater lines, each in ohmic electrical connection with a heating element, the heater lines being different from the word lines and the bit lines.
6. The device of claim 5 wherein each memory cell of the first array of memory cells is a multi-bit memory cell.
7. The device of claim 5 wherein, for each memory cell of the first array of memory cells, a first region of the heating element adjacent the adjustable resistor is narrower than a second region of the heating element not adjacent the adjustable resistor.
8. The device of claim 5 wherein the first dielectric layer has a first thermal conductivity and the second dielectric layer has a second thermal conductivity greater than the first thermal conductivity.
9. The integrated circuit of claim 1 wherein a first region of the heating element adjacent the adjustable resistor is narrower than a second region of the heating element not adjacent the adjustable resistor.
10. The memory cell of claim 3 wherein a first region of the thin film heating element adjacent the thin film adjustable resistor is narrower than a second region of the thin film heating element not adjacent the thin film adjustable resistor.