Plasma processing apparatus and plasma processing method

1. A plasma processing apparatus comprising:

an electrostatic chuck configured to hold a substrate inside a vacuum container;

a pulse power source configured to apply a pulse having positive and negative polarities as a bias voltage;

a controller configured to control the positive and negative polarities of the pulse; and

a resistance sensor configured to measure a plasma resistance value inside the vacuum container,

wherein the controller is configured to set an application time of the positive bias pulse to be no more than a product of a predetermined capacitance of the electrostatic chuck and the plasma resistance value measured by the resistance sensor.

2. A plasma processing apparatus comprising:

an electrostatic chuck configured to hold a substrate inside a vacuum container;

a pulse power source configured to apply a pulse having positive and negative polarities as a bias voltage;

a controller configured to control the positive and negative polarities of the pulse; and

a current sensor configured to measure a current during the application of a pulse,

wherein the controller is configured to receive a current value measured by the current sensor, and apply a reverse bias pulse after the application of the positive bias pulse until a current time integral value is equal to a current time integral value measured during the application of the positive bias pulse so as to discharge any remaining charge on the substrate or the electrostatic chuck due to the application of the positive bias pulse.

3. The plasma processing apparatus according to claim 1 , wherein the frequency of the pulse power source is configured to exceed 10 kHz.