Tandem photovoltaic device and method for manufacturing the same
Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.
1. A method for manufacturing a photovoltaic device, the method comprising:
forming a first electrode by depositing a transparent conductive oxide layer on a substrate, a surface of the transparent conductive oxide layer being formed with peaks having a height;
etching the surface of the transparent conductive oxide layer sufficient to smooth the peaks of the transparent conductive oxide layer, the peaks being reduced in height;
forming a first unit cell comprising a p-type semiconductor layer, an intrinsic semiconductor layer and an n-type semiconductor layer, each of which is sequentially stacked on the first electrode;
forming a second unit cell comprising a p-type semiconductor layer, an intrinsic semiconductor layer and an n-type semiconductor layer, each of which is sequentially stacked on the first unit cell; and
forming a second electrode on the second unit cell,
wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material,
wherein the intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material,
wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13, and
wherein the forming the first electrode produces V-shaped valleys between the peaks, and the etching changes the V-shaped valleys to U-shaped valleys.
2. The method of claim 1 , wherein the transparent conductive oxide layer is deposited by a CVD method to have a thickness of equal to or more than 1 μm and equal to or less than 2 μm.
3. The method of claim 1 , wherein, when measuring the first electrode by X-Ray Diffraction (XRD) in θ-2θ geometry, an intensity of a peak corresponding to plane is greater than an intensity of peaks corresponding to (0002) and planes.
4. The method of claim 1 , wherein the forming the transparent conductive oxide layer comprises depositing the transparent conductive oxide layer including ZnO, and wherein a ratio of Zn/O is equal to or more than 1.1 and equal to or less than 1.3.
5. The method of claim 1 , wherein the depositing the transparent conductive oxide layer comprises depositing the transparent conductive oxide layer including ZnO, and wherein a hydrogen containing concentration of the transparent conductive oxide layer is equal to or more than 10 19 /cm 3 and equal to or less than 10 21 /cm 3 .
6. The method of claim 1 , wherein a resistivity of the transparent conductive oxide layer is equal to or less than 2×10 −3 Ωcm, and wherein a mobility of the transparent conductive oxide layer is equal to or more than 25 cm 2 /Vsec.
7. The method of claim 1 , wherein a haze ratio of the transparent conductive oxide layer is equal to or more than 5% and equal to or less than 20% in a wavelength of 600 nm, and wherein a transmittance of the transparent conductive oxide layer is equal to or more than 80% with respect to light in the wavelength range from 400 nm to 800 nm.
8. The method of claim 1 , wherein the etching is performed by means of a wet etching process.
9. The method of claim 1 , wherein the etching is performed by immersing the substrate which the transparent conductive oxide layer has been deposited on in an acid aqueous solution having a concentration of equal to or more than 0.5% and equal to or less than 5% for equal to or more than 5 seconds and equal to or less than 20 seconds.
10. A method for manufacturing a photovoltaic device, the method comprising:
forming a first electrode by depositing a transparent conductive oxide layer on a substrate, a surface of the transparent conductive oxide layer being formed with peaks having a height;
smoothing the peaks on the surface of the transparent conductive oxide layer, the peaks being reduced in height;
forming a first unit cell comprising a p-type semiconductor layer, an intrinsic semiconductor layer and an n-type semiconductor layer, each of which is sequentially stacked on the first electrode;
forming a second unit cell comprising a p-type semiconductor layer, an intrinsic semiconductor layer and an n-type semiconductor layer, each of which is sequentially stacked on the first unit cell; and
forming a second electrode on the second unit cell;
wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material;
wherein the intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material; and
wherein the forming the first electrode produces V-shaped valleys between the peaks, and the smoothing changes the V-shaped valleys to U-shaped valleys.
11. The method of claim 10 , wherein the peaks of the surface of the transparent conductive oxide layer are smoothed sufficiently to avoid formation of an amorphous incubation film between the first unit cell and the second unit cell.
12. The method of claim 10 , wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.
13. The method of claim 10 , wherein the transparent conductive oxide layer is deposited by a CVD method to have a thickness of equal to or more than 1 μm and equal to or less than 2 μm.
14. The method of claim 10 , wherein, when measuring the first electrode by X-Ray Diffraction (XRD) in θ-2θ geometry, an intensity of a peak corresponding to plane is greater than an intensity of peaks corresponding to (0002) and planes.
15. The method of claim 10 , wherein the forming the transparent conductive oxide layer comprises depositing the transparent conductive oxide layer including ZnO, and wherein a ratio of Zn/O is equal to or more than 1.1 and equal to or less than 1.3.
16. The method of claim 10 , wherein the depositing the transparent conductive oxide layer comprises depositing the transparent conductive oxide layer including ZnO, and wherein a hydrogen containing concentration of the transparent conductive oxide layer is equal to or more than 10 19 /cm 3 and equal to or less than 10 21 /cm 3 .
17. The method of claim 10 , wherein a resistivity of the transparent conductive oxide layer is equal to or less than 2×10 −3 Ωcm, and wherein a mobility of the transparent conductive oxide layer is equal to or more than 25 cm 2 /Vsec.
18. The method of claim 10 , wherein a haze ratio of the transparent conductive oxide layer is equal to or more than 5% and equal to or less than 20% in a wavelength of 600 nm, and wherein a transmittance of the transparent conductive oxide layer is equal to or more than 80% with respect to light in the wavelength range from 400 nm to 800 nm.
19. The method of claim 10 , wherein the smoothing is performed by means of a wet etching process.
20. The method of claim 19 , wherein the etching is performed by immersing the substrate which the transparent conductive oxide layer has been deposited on in an acid aqueous solution having a concentration of equal to or more than 0.5% and equal to or less than 5% for equal to or more than 5 seconds and equal to or less than 20 seconds.