Sputtering apparatus and manufacturing method of semiconductor light-emitting element
A sputtering apparatus ( 1 ) includes: a chamber ( 10 ) having an inside maintained in a depressurized state to generate plasma discharge ( 20 ); a cathode ( 22 ) placed in the chamber ( 10 ) and holding a target ( 21 ); and a substrate holder ( 60 ) holding a substrate ( 110 ) so that one surface of the substrate ( 110 ) faces the surface of the target ( 21 ). The substrate ( 110 ) is arranged at an upper portion in the sputtering apparatus ( 1 ) with the surface of the substrate ( 110 ) facing downward. The target ( 21 ) is arranged at a lower portion in the sputtering apparatus ( 1 ) with the surface of the target ( 21 ) facing upward. The sputtering apparatus ( 1 ) includes a heater ( 65 ) for heating the substrate ( 110 ). The temperature of the substrate ( 110 ) is raised by absorbing electromagnetic waves radiated from the heater ( 65 ). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
1. A manufacturing method of a semiconductor light-emitting element in a sputtering apparatus including a target placed at a lower portion in a chamber, a substrate placed at an upper portion in the chamber, and a heating member placed above the substrate in the chamber, the target being any one of a group III element, a mixture including a group III element, and a compound including a group III element, the substrate being arranged in such a manner that one surface thereof faces the target, the method comprising:
a substrate heating step for heating the substrate, the substrate being heated by absorbing electromagnetic waves having wavelengths including 4 μm or more, the electromagnetic waves being radiated from the heating member; and
a group III nitride layer forming step for forming a group III nitride layer on the heated substrate by plasma generated in an atmosphere including nitrogen between the target and the substrate,
wherein the substrate is sapphire, and
wherein a temperature to which the substrate is heated by absorbing the electromagnetic waves is 500 degrees C. or more and less than 1500 degrees C.
2. The manufacturing method of a semiconductor light-emitting element according to claim 1 , wherein the heating member is carbon covered with pyrolytic boron nitride (PBN).