METHODS OF FORMING RUTHENIUM-CONTAINING FILMS BY ATOMIC LAYER DEPOSITION
A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO) 3 wherein L is selected from the group consisting of a linear or branched C 2 -C 6 -alkenyl and a linear or branched C 1-6 -alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C 2 -C 6 -alkenyl, C 1-6 -alkyl, alkoxy and NR 1 R 2 ; wherein R 1 and R 2 are independently alkyl or hydrogen.
1 . A method of forming a ruthenium-containing film by atomic layer deposition, the method comprising delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I:
(L)Ru(CO) 3 (Formula I)
wherein:
L is selected from the group consisting of a linear or branched C 2 -C 6 -alkenyl and a linear or branched C 1-6 -alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C 2 -C 6 -alkenyl, C 1-6 -alkyl, alkoxy and NR 1 R 2 ; wherein R 1 and R 2 are independently alkyl or hydrogen.
2 . The method of claim 1 , wherein L is a linear or branched dienyl-containing moiety.
3 . The method of claim 1 , wherein L is a linear or branched dienyl-containing moiety selected from the group consisting of butadienyl, pentadienyl, hexadienyl, heptadienyl and octadienyl.
4 . The method of claim 1 , wherein L is substituted with one or more substituents independently selected from the group consisting of C 2 -C 6 -alkenyl, C 1-6 -alkyl, alkoxy and NR 1 R 2 ; and R 1 and R 2 are independently alkyl or hydrogen.
5 . The method of claim 1 , wherein the at least one precursor is selected from the group consisting of:
(η 4 -buta-1,3-diene)tricarbonylruthenium;
(η 4 -2,3-dimethylbuta-1,3-diene)tricarbonylruthenium; and
(η 4 -2-methylbuta-1,3-diene)tricarbonylruthenium.
6 . The method of claim 1 , wherein the atomic layer deposition is photo-assisted atomic layer deposition.
7 . The method of claim 1 , wherein the atomic layer deposition is liquid injection atomic layer deposition.
8 . The method of claim 1 , wherein the atomic layer deposition is pulsed injection atomic layer deposition.
9 . The method of claim 1 , wherein the ruthenium-containing film is formed by atomic layer deposition using a non-oxygen co-reactant.
10 . The method of claim 9 , wherein the non-oxygen co-reactant comprises substantially of a gaseous material selected from the group consisting of hydrogen, nitrogen, argon, ammonia, hydrazine, alkylhydrazine, silane and borane.
11 . The method of claim 10 , wherein the non-oxygen gaseous material is hydrogen.
12 . The method of claim 1 , wherein the substrate is selected from the group consisting of silicon, silicon oxide, silicon nitride, tantalum, tantalum nitride and copper.
13 . The method of claim 1 , wherein the substrate is metal and the resistance is less than about 100 mohm/cm 2 .
14 . The method of claim 13 , wherein the substrate is tantalum or copper.
15 . The method of claim 1 , wherein the substrate is silicon or silicon dioxide and the resistance is from about 20 ohm/cm 2 to about 100 mohm/cm 2 .
16 . The method of claim 1 , wherein the method is used for a memory and logic application on a silicon chip.
17 . The method of claim 16 , wherein the method is used for DRAM or CMOS applications.