Cross-section systems and methods
A first instrument ( 230 ) is used to image a first semiconductor article having a trench ( 110 ) of defined cross-section, while a second instrument ( 220 ) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench ( 110 ) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.
1. A method, comprising:
using a first apparatus to prepare a first cross-section of a sample, the first cross-section having a first roughness; and
using a second apparatus to modify the first cross-section of the sample to provide a second cross-section of the sample the second cross-section having a second roughness; wherein the first roughness is at least two times greater than the second roughness; and wherein, the second apparatus being different from the first apparatus.
2. The method of claim 1 , wherein there is a period of time between preparing the first cross-section and modifying the cross-section.
3. The method of claim 1 , wherein the first apparatus is elected from the group consisting of laser beam sources, plasma ion beam sources and liquid metal ion beam sources.
4. The method of claim 1 , wherein the second apparatus comprises a gas field ion source.
5. The method of claim 1 , further comprising, after preparing a first cross-section of a sample but before modifying the first cross-section of the sample, moving the sample.
6. The method of claim 1 , wherein the second sample is a semiconductor article.
7. The method of claim 1 , wherein the first apparatus and the second apparatus are housed in the same chamber.
8. A method, comprising:
preparing a first cross-section of a sample, the first cross-section having a first roughness, the first cross-section having sidewalls and a bottom wall; and
modifying the first cross-section of the sample to provide a second cross-section of the sample, the second cross-section having a second roughness different from the first roughness, the second cross-section having sidewalls and a bottom wall,
wherein a first apparatus is used to prepare the first cross-section of the sample, a second apparatus is used to prepare the second cross-section of the sample, and the second apparatus is different from the first apparatus.
9. A system, comprising:
a first apparatus configured to prepare a first cross-section of a sample, the first cross-section having a first roughness; and
a second apparatus configured to modify the first cross-section of the sample to provide a second cross-section of the sample, the second cross-section having a second roughness, wherein the first roughness is at least two times greater than the second roughness; and wherein the second apparatus is different from the first apparatus.
10. The system of claim 9 , wherein the first apparatus is selected from the group consisting of laser beam sources, plasma ion beam sources and liquid metal ion beam sources.
11. The system of claim 9 , wherein the second apparatus comprises a gas field ion source.
12. The system of claim 9 , further comprising a third apparatus different from the first and second apparatuses, the third apparatus being configured to inspect the sample.
13. The system of claim 9 , comprising a chamber, and the first apparatus and the second apparatus are housed in the chamber.
14. A method, comprising:
using a gas field ion microscope to image a cross-section of a first sample, the cross-section of the first sample having sidewalls and a bottom wall;
simultaneously with imaging the cross-section of the first sample, removing a portion of each of a first plurality of samples to expose a cross-section of each of the first plurality of samples so that the cross-section of each of the first plurality of samples can be imaged, the cross-section of each of the first plurality of samples having sidewalls and a bottom wall;
after imaging the cross-section of the first sample, imaging the cross-section of at least one of the first plurality of samples; and
simultaneously with imaging the cross-section of the at least one of the first plurality of samples, preparing a cross-section of a second plurality of samples so that the cross-section of each of the second plurality of samples can be imaged, the cross-section of each of the second plurality of samples having sidewalls and a bottom wall,
wherein the first plurality of samples excludes the first sample, and the second plurality of samples excludes the first plurality of samples.