Orthogonal processing of organic materials used in electronic and electrical devices
An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO 2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.
1. A method for patterning organic structures, the method comprising:
coating a substrate with a layer of fluorinated photoresist material;
selectively exposing portions of the layer of fluorinated photoresist material to radiation to form a first pattern of exposed fluorinated photoresist material and a second pattern of unexposed fluorinated photoresist material; and,
developing the first pattern of exposed fluorinated photoresist material and removing the second pattern of unexposed fluorinated photoresist material in a solvent selected from the group consisting of one or more fluorinated solvents; and,
removing the first pattern of exposed fluorinated photoresist material with a second fluorinated solvent that is the same as or different from the solvent.
2. The method of claim 1 , further comprising:
treating the developed first pattern of exposed fluorinated photoresist material with a solubility enhancement agent to render the developed first pattern of exposed photoresist material soluble in the second fluorinated solvent.
3. The method of claim 2 wherein the solubility enhancement agent comprises a silazane.
4. The method of claim 3 wherein the silazane is selected from the group consisting of 1,1,1,3,3,3-hexamethyldisilazane, 1,1,3,3-tetramethyldisilazane and combinations thereof.
5. The method of claim 1 , further comprising:
depositing active organic electronic material on the substrate after developing the first pattern of exposed fluorinated photoresist material and removing the second pattern of unexposed fluorinated photoresist material; and,
leaving a second pattern of active organic electronic material on the substrate after the first pattern of fluorinated photoresist material is removed with the second fluorinated solvent.
6. The method of claim 5 wherein the active organic electronic material comprises a semiconducting polymer or small molecule.
7. The method of claim 1 wherein the one or more fluorinated solvents comprise at least one hydrofluoroether.
8. The method of claim 1 wherein the one or more fluorinated solvents is selected from the group consisting of methyl nonafluorobutyl ether, methyl nonafluoroisobutyl ether, isomeric mixtures of methyl nonafluorobutyl ether and methyl nonafluoroisobutyl ether, ethyl nonafluorobutyl ether, ethyl nonafluoroisobutyl ether, isomeric mixtures of ethyl nonafluorobutyl ether and ethyl nonafluoroisobutyl ether, 3-ethoxy-1,1,1,2,3,4,4,5,5,6,6,6-dodecafluoro-2-trifluoromethyl-hexane, 1,1,1,2,2,3,4,5,5,5-decafluoro-3-methoxy-4-trifluoromethyl-pentane and combinations thereof.
9. The method of claim 1 wherein the fluorinated photoresist material comprises a resorcinarene.
10. The method of claim 1 wherein the fluorinated photoresist material further comprises a photo-acid generator.
11. The method of claim 10 wherein the photo-acid generator is selected from the group consisting of N-nonafluorobutane-sulfonyloxy-1,8-naphthalimide, N-nonafluoropropane-sulfonyloxy-1,8-naphthalimide, N-nonafluoroethane-sulfonyloxy-1,8-naphthalimide, N-nonafluoromethane-sulfonyloxy-1,8-naphthalimide, triphenylsulfonium perfluorooctanesulfonate, triphenylsulfonium perfluorobutanesulfonate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, diphenyliodonium perfluorooctanesulfonate, diphenyliodonium perfluorobutanesulfonate, diphenyliodonium trifluoromethanesulfonate, di-(4-tert-butyl)phenyliodonium, perfluorooctanesulfonate, di-(4-tert-butyl)phenyliodonium perfluorobutanesulfonate, di-(4-tert-butyl)phenyliodonium trifluoromethanesulfonate, diphenyliodonium hexafluorophosphate, diphenyliodonium hexafluoroantimonate, di-(4-tert-butyl)phenyliodonium hexafluorophosphate, di-(4-tert-butyl)phenyliodonium hexafluoroantimonate, n-hydroxy-5-norbornene-2,3-dicarboximide perfluorooctanesulfonate, n-hydroxy-5-norbornene-2,3-dicarboximide perfluorobutanesulfonate, n-hydroxy-5-norbornene-2,3-dicarboximide trifluoromethanesulfonate, n-hydroxynaphthalimide perfluorooctanesulfonate, n-hydroxynaphthalimide perfluorobutanesulfonate, n-hydroxynaphthalimide trifluorometahnesulfonate and combinations thereof.
12. The method of claim 1 wherein the first pattern of exposed fluorinated photoresist material comprises a resorcinarene having the following structure:
13. The method of claim 1 wherein the fluorinated photoresist material comprises a resorcinarene having the following structure, where R1 is a semi-perfluoroakyl group and R2 is a tert-butoxycarbonyl group:
14. The method of claim 1 wherein the exposed fluorinated photoresist material comprises a copolymer having the following structure:
15. The method of claim 1 wherein the fluorinated photoresist material comprises a copolymer having the following structure:
16. The method of claim 1 wherein the fluorinated photoresist material comprises a copolymer having the following structure:
17. The method of claim 1 wherein the fluorinated photoresist material is selected from the group consisting of fluorinated resorcinarene, a fluorinated photoresist, a fluorinated molecular glass photoresist, and a polymer comprising fluorine-containing functional groups and acid-sensitive or radiation-sensitive functional groups.
18. The method of claim 1 wherein the fluorinated photoresist material is a copolymer of perfluorodecyl methacrylate and 2-nitrobenzyl methacrylate.
19. The method of claim 1 wherein the fluorinated photoresist material is a copolymer of perfluorodecyl methacrylate and tert-butyl methacrylate.
20. The method of claim 1 , which is used in forming a device.
21. The method of claim 20 , wherein the device is an organic thin film transistor, an organic light-emitting diode, an organic photovoltaic, an organic sensor, or a combination thereof.
22. A method for patterning organic structures, the method comprising:
coating a substrate with a layer of fluorinated photoresist material, wherein the substrate comprises one or more layers to be patterned, the one or more layers comprising one or more thin films of at least one active organic electronic material;
selectively exposing portions of the layer of fluorinated photoresist material to radiation to form a first pattern of exposed fluorinated photoresist material and a second pattern of unexposed fluorinated photoresist material, a first portion of the one or more layers covered under the first pattern of exposed fluorinated photoresist material and a second portion of the one or more layers covered under the second pattern of unexposed fluorinated photoresist material; and,
removing the second pattern of unexposed fluorinated photoresist material in one or more fluorinated solvents.
23. The method of claim 22 , further comprising removing the second portion of the one or more layers after removing the second pattern of unexposed fluorinated photoresist material.
24. The method of claim 23 , wherein the removing the second portion of the one or more layers comprises using an etchant.
25. The method of claim 24 , wherein the etchant comprises a plasma.
26. The method of claim 24 where the etchant comprises a non-fluorinated solvent.
27. The method of claim 22 wherein the one or more layers comprises an adhesion promotion layer or an anti-reflection layer.
28. The method of claim 22 wherein the one or more layers comprises one or more dielectric materials.
29. The method of claim 22 wherein the at least one active organic electronic material comprises a semiconducting polymer or small molecule.